1MBI400S-120 FUJI ELECTRIC, 1MBI400S-120 Datasheet

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1MBI400S-120

Manufacturer Part Number
1MBI400S-120
Description
IGBT MODULE, 1200V, 400A
Manufacturer
FUJI ELECTRIC
Datasheet

Specifications of 1MBI400S-120

Transistor Polarity
N Channel
Dc Collector Current
600A
Collector Emitter Voltage Vces
2.6V
Power Dissipation Max
3.1kW
Collector Emitter Voltage V(br)ceo
1.2kV
Transistor Case Style
Module
No. Of
RoHS Compliant
Power Dissipation Pd
3.1kW
Rohs Compliant
Yes

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1MBI400S-120
1200V / 400A 1 in one-package
· High speed switching
· Voltage drive
· Low inductance module structure
· Inverter for Motor drive
· AC and DC Servo drive amplifier
· Uninterruptible power supply
· Industrial machines, such as Welding machines
Item
Collector-Emitter voltage
Gate-Emitter voltaga
Collector
current
Max. power dissipation
Operating temperature
Storage temperature
Isolation voltage *
Screw torque
*
*
Item
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time
Turn-off time
Forward on voltage
Reverse recovery time
Item
Thermal resistance
*
1 :
2 :
4
: This is the value which is defined mounting on the additional cooling fin with thermal compound
Thermal resistance characteristics
Electrical characteristics (at Tj=25°C unless otherwise specified)
Recommendable value : Mounting 2.5 to 3.5 N·m(M5 or M6)
Aii terminals should be connected together when isolation test will be done
Absolute maximum ratings (at Tc=25°C unless otherwise specified)
Features
Applications
Maximum ratings and characteristics
Continuous
1ms
1ms
1
Terminal 3.5 to 4.5 N·m(M6), 1.3 to 1.7N·m(M4)
Tc=25°C IC pulse
Tc=25°C IC
Tc=80°C
Tc=80°C
Symbol
Terminals *
V
V
-I
-I
P
T
T
V
Mounting *
Terminals *
Symbol
Rth(j-c)
Rth(j-c)
Rth(c-f)*
Symbol
C
C
j
stg
I
I
V
V
C
C
C
t
t
t
t
t
V
t
CES
GES
C
is
CES
GES
on
off
f
r
r(i)
rr
GE(th)
CE(sat)
ies
oes
res
F
pulse
4
2
2
2
Characteristics
Min.
-40 to +125
AC 2500 (1min.)
Characteristics
Min.
Rating
5.5
1200
1200
3100
+150
±20
600
400
800
400
800
3.5
4.5
1.7
48000
10000
Typ.
8800
Typ.
0.0125
7.2
2.3
2.8
0.35
0.25
0.1
0.45
0.08
2.7
2.4
Unit
V
V
A
A
A
A
A
A
W
°C
°C
V
N·m
N·m
N·m
Max.
Max.
4.0
0.8
8.5
2.6
1.2
0.6
1.0
0.3
3.5
0.35
0.04
0.12
V
V
V
Tc=25° C V
Tc=125°C
V
V
f=1MHz
V
I
V
R
Tj=25°C
Tj=125°C
I
IGBT
FWD
the base to cooling fin
Conditions
Conditions
C
F
GE
CE
CE
GE
CE
CC
GE
G
=400A
=400A
=1.8 ohm
=0V, V
=20V, I
=0V, V
=0V
=10V
=600V
=±15V
Equivalent Circuit Schematic
C
CE
GE
C
GE
=400mA
I
=1200V
=±20V
F
=15V, I
=400A, V
C
=400A
GE
G
=0V
IGBT Module
E
Unit
°C/W
°C/W
°C/W
Unit
mA
µA
V
V
pF
µs
V
µs
E

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1MBI400S-120 Summary of contents

Page 1

... Features · High speed switching · Voltage drive · Low inductance module structure Applications · Inverter for Motor drive · AC and DC Servo drive amplifier · Uninterruptible power supply · Industrial machines, such as Welding machines Maximum ratings and characteristics Absolute maximum ratings (at Tc=25° ...

Page 2

... Characteristics Collector current vs. Collector-Emiiter voltage Tj= 25°C (typ.) 1000 800 600 400 200 Collector - Emitter voltage : VCE [ V ] Collector current vs. Collector-Emiiter voltage VGE=15V (typ.) 1000 800 600 400 200 Collector - Emitter voltage : VCE [ V ] Capacitance vs. Collector-Emiiter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25°C ...

Page 3

... Switching time vs. Collector current (typ.) Vcc=600V, VGE=+-15V, Rg= 1.8ohm, Tj= 25°C 1000 toff 500 ton tr 100 100 200 Collector current : Switching time vs. Gate resistance (typ.) Vcc=600V, Ic=400A, VGE=+-15V, Tj= 25°C 5000 1000 500 100 50 0.5 1 Gate resistance : Rg [ ohm ] Switching loss vs. Gate resistance (typ.) Vcc=600V, Ic=400A, VGE=+-15V, Tj= 125° ...

Page 4

... Forward current vs. Forward on voltage (typ Forward on voltage : Transient thermal resistance Pulse width : Pw [ sec ] Outline Drawings, mm mass : 380g Tj=25°C Tj=125°C Irr(125°C) trr(125°C) Irr(25° trr(25° FWD IGBT IGBT Module Reverse recovery characteristics (typ.) Vcc=600V, VGE=+-15V, Rg=1.8ohm ...

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