1MBI400S-120 FUJI ELECTRIC, 1MBI400S-120 Datasheet - Page 2

• Manufacturer Part Number: 1MBI400S-120
• Description: IGBT MODULE, 1200V, 400A
• Manufacturer: FUJI ELECTRIC

Specifications of 1MBI400S-120

• Transistor Polarity: N Channel
• Dc Collector Current: 600A
• Collector Emitter Voltage Vces: 2.6V
• Power Dissipation Max: 3.1kW
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Transistor Case Style: Module
• No. Of: RoHS Compliant
• Power Dissipation Pd: 3.1kW
• Rohs Compliant: Yes

1MBI400S-120
Characteristics
100000
10000
1000
1000
5000
1000
800
600
400
200
800
600
400
200
0
0
0
0
0
Capacitance vs. Collector-Emiiter voltage (typ.)
Collector current vs. Collector-Emiiter voltage
Collector current vs. Collector-Emiiter voltage
5
1
1
Collector - Emitter voltage : VCE [ V ]
Collector - Emitter voltage : VCE [ V ]
Collector - Emitter voltage : VCE [ V ]
VGE=0V, f= 1MHz, Tj= 25°C
10
VGE=15V (typ.)
Tj= 25°C (typ.)
2
2
15
VGE= 20V
20
Tj= 25°C
3
3
15V
25
12V
4
Tj= 125°C
4
30
Coes
Cres
Cies
10V
8V
35
5
5
1000
1000
800
600
400
200
800
600
400
200
10
0
8
6
4
2
0
0
0
5
0
Collector-Emiiter voltage vs. Gate-Emitter voltage
Collector current vs. Collector-Emiiter voltage
1
Collector - Emitter voltage : VCE [ V ]
1000
Gate - Emitter voltage : VGE [ V ]
10
Vcc=600V, Ic=400A, Tj= 25°C
Dynamic Gate charge (typ.)
Gate charge : Qg [ nC ]
Tj= 25°C (typ.)
Tj= 125°C (typ.)
2
2000
15
3
VGE= 20V
3000
20
IGBT Module
Ic= 800A
Ic= 400A
Ic=200A
4
15V
10V
8V
12V
4000
25
5
25
20
15
10
5
0