2MBI225U4N-120-50 FUJI ELECTRIC, 2MBI225U4N-120-50 Datasheet - Page 10

• Manufacturer Part Number: 2MBI225U4N-120-50
• Description: IGBT, 2 PACK MOD, 1200V, 225A, M254
• Manufacturer: FUJI ELECTRIC

Specifications of 2MBI225U4N-120-50

• Module Configuration: Dual
• Transistor Polarity: N Channel
• Dc Collector Current: 225A
• Collector Emitter Voltage Vces: 2.05V
• Power Dissipation Max: 1.04kW
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Transistor Case Style: Module
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

1000.0
600
500
400
300
200
100
100.0
600
500
400
300
200
100
10.0
0
1.0
0.1
0
0
0
Collector current vs. Collector-Emitter voltage (typ.)
Collector current vs. Collector-Emitter voltage (typ.)
0
Capacitance vs. Collector-Emitter voltage (typ.)
Collector-Emitter voltage : VCE [ V ]
Collector-Emitter voltage : VCE [ V ]
VGE=0V, f=1MHz, Tj=25
1
Collector-Emitter voltage : VCE [ V ]
1
VGE=15V / chip
VGE=20V
10
Tj=25
2
2
Tj=25
o
C / chip
15V
o
C
3
3
20
Tj=125
12V
o
C
4
4
o
C
Cres
Coes
Cies
10V
8V
30
5
5
10
600
500
400
300
200
100
8
6
4
2
0
0
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
0
5
0
0
MS5F6508
Collector current vs. Collector-Emitter voltage (typ.)
200
Collector-Emitter voltage : VCE [ V ]
1
10
Gate-Emitter voltage : VGE [ V ]
Vcc=600V, Ic=225A, Tj=25
400
Dynamic Gate charge (typ.)
Gate charge : Qg [ nC ]
Tj=125
Tj=25
600
2
VGE=20V
15
o
o
C / chip
C / chip
800
VGE
VCE
3
15V
1000
20
o
C
H04-004-03a
10
Ic=450A
Ic=225A
Ic=112.5A
1200
4
14
10V
8V
12V
1400
25
a
5