2MBI225U4N-120-50 FUJI ELECTRIC, 2MBI225U4N-120-50 Datasheet - Page 4
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2MBI225U4N-120-50
Manufacturer Part Number
2MBI225U4N-120-50
Description
IGBT, 2 PACK MOD, 1200V, 225A, M254
Manufacturer
FUJI ELECTRIC
Datasheet
1.2MBI225U4N-120-50.pdf
(14 pages)
Specifications of 2MBI225U4N-120-50
Module Configuration
Dual
Transistor Polarity
N Channel
Dc Collector Current
225A
Collector Emitter Voltage Vces
2.05V
Power Dissipation Max
1.04kW
Collector Emitter Voltage V(br)ceo
1.2kV
Transistor Case Style
Module
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2MBI225U4N-120-50
Manufacturer:
FUJITSU/富士通
Quantity:
20 000
3. Absolute Maximum Ratings ( at Tc= 25
Collector-Emitter voltage
Gate-Emitter voltage
Collector current
Collector Power Dissipation
Junction temperature
Storage temperature
Isolation
voltage
Screw
Torque
(*1) All terminals should be connected together when isolation test will be done.
(*2) Two thermistor terminals should be connected together, each other terminals should be connected together
(*3) Recommendable Value : 2.5 to 3.5 Nm (M5)
(*4) Recommendable Value : 3.5 to 4.5 Nm (M6)
4. Electrical characteristics ( at Tj= 25
(*5) Biggest internal terminal resistance among arm.
5. Thermal resistance characteristics
Thermal resistance(1device)
Contact Thermal resistance
(1 device) (*6)
(*6) This is the value which is defined mounting on the additional cooling fin with thermal compound.
Zero gate voltage
collector current
Gate-Emitter
leakage current
Gate-Emitter
threshold voltage
Collector-Emitter
saturation voltage
Input capacitance
Turn-on time
Turn-off time
Forward on voltage
Reverse recovery time
Lead resistance,
terminal-chip (*5)
Resistance
B value
and shorted to base plate when isolation test will be done.
between terminal and copper base (*1)
between thermistor and others (*2)
Mounting (*3)
Terminals (*4)
Items
Items
Items
ICES
IGES
VGE(th)
VCE(sat)
(terminal)
VCE(sat)
(chip)
Cies
ton
tr
tr(i)
toff
tf
VF
(terminal)
VF
(chip)
trr
R lead
R
B
Rth(j-c)
Rth(c-f)
Symbols
Symbols
o
C unless otherwise specified )
VCE=1200V
VGE=0V
VCE=0V
VGE=±20V
VCE=20V
Ic=225mA
Ic=225A
VGE=15V
VCE=10V,VGE=0V,f=1MHz
Vcc=600V
Ic=225A
VGE=±15V
RG=3.0Ω
IF=225A
VGE=0V
IF=225A
T=25
T=100
T=25/50
IGBT
FWD
with Thermal Compound
o
C unless otherwise specified )
o
C
o
VCES
VGES
Ic
Icp
-Ic
-Ic pulse
Pc
Tj
Tstg
Viso
-
C
Conditions
Conditions
o
Symbols
C
Tj=25
Tj=125
Tj=25
Tj=125
Tj=25
Tj=125
Tj=25
Tj=125
MS5F6508
Continuous
1ms
1ms
1 device
AC : 1min.
o
o
o
o
C
C
C
C
o
o
o
o
C
C
C
C
Conditions
3305
min.
min.
4.5
465
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Tc=25
Tc=80
Tc=25
Tc=80
Characteristics
Characteristics
a
a
a
0.0167
5000
1.30
2.25
2.45
1.90
2.10
0.32
0.10
0.03
0.41
0.07
1.90
2.00
1.65
1.75
3375
o
o
o
o
495
typ.
typ.
6.5
25
C
C
C
C
-
-
-
-
-
-40 to +125
Maximum
Ratings
a
1200
1040
+150
2500
±20
300
225
600
450
225
450
3.5
4.5
max.
2.40
2.05
1.20
0.60
1.00
0.30
2.05
1.80
max.
3450
600
0.35
0.12
0.20
3.0
8.5
520
-
-
-
-
-
-
-
-
-
H04-004-03a
4
14
Units
Units
Units
o
VAC
N m
mA
mΩ
C/W
o
nA
nF
W
us
us
Ω
V
V
A
V
V
V
K
C
a