2MBI225U4N-120-50 FUJI ELECTRIC, 2MBI225U4N-120-50 Datasheet - Page 5

• Manufacturer Part Number: 2MBI225U4N-120-50
• Description: IGBT, 2 PACK MOD, 1200V, 225A, M254
• Manufacturer: FUJI ELECTRIC

Specifications of 2MBI225U4N-120-50

• Module Configuration: Dual
• Transistor Polarity: N Channel
• Dc Collector Current: 225A
• Collector Emitter Voltage Vces: 2.05V
• Power Dissipation Max: 1.04kW
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Transistor Case Style: Module
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

6.Recommend way of module mounting to Heat sink Clamping
Logo of production
8. Applicable category
9. Storage and transportation notes
10. Definitions of switching time
11. Packing and Labeling
7. Indication on module
(1) Initial : 1/3 specified torque, sequence (1)→(2)→(3)→(4)
(2) Final ：Full specified torque (3.5 Nm),sequence(4)→(3)→(2)→(1)
This specification is applied to IGBT-Module named 2MBI225U4N-120-50.
Display on the packing box
- Logo of production
- Type name
- Lot No
- Products quantity in a packing box
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The module should be stored at a standard temperature of 5 to 35
Be careful to solderability of the terminals if the module has passed over one
year from manufacturing date, under the above storage condition.
Store modules in a place with few temperature changes in order to avoid condensation on the
module surface.
Avoid exposure to corrosive gases and dust.
Avoid excessive external force on the module.
Store modules with unprocessed terminals.
Do not drop or otherwise shock the modules when transporting.
Lot.No.
R
G
V
(3)
(2)
GE
(1)
(4)
V
CE
Ic
2MBI225U4N-120-50
L
225A 1200V
Vcc
Heat sink
Module
0V
Mounting holes
0V
0A
V
V
Ic
GE
CE
10%
90%
t
o n
t
Place of manufacturing (code)
r
t
t
r ( i )
MS5F6508
r r
10%
o
C and humidity of 45 to 75% .
I
r r
V
Ic
CE
90%
t
o f f
90%
t
f
10%
0V
H04-004-03a
5
14
a