GT25Q102 Toshiba, GT25Q102 Datasheet
GT25Q102
Specifications of GT25Q102
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GT25Q102 Summary of contents
Page 1
... Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range Silicon N Channel IGBT GT25Q102 = 2.7 V (max) Symbol Rating Unit V 1200 V CES ± GES 200 150 °C j −55~150 T °C stg 1 GT25Q102 Unit: mm JEDEC ― JEITA ― TOSHIBA 2-21F2C Weight: 9.75 g (typ.) 2003-03-18 ...
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... Inductive Load r = 600 ± Ω off ( (off) 10% 10 GT25Q102 Min Typ. ±500 4.0 2.1 1360 0.10 0.30 0.16 (Note1) 0.68 0.625 10% 90% 90% 10% 10 (on off on 2003-03-18 ...
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... Tc = 25° Gate-emitter voltage V ( – Common emitter 125°C − Gate-emitter voltage V ( Common emitter Tc = −40° Gate-emitter voltage V 20 Common emitter Tc = 125° Gate-emitter voltage Common emitter −60 −20 20 Case temperature Tc (°C) 3 GT25Q102 V – ( – (V) GE – (sat 100 140 2003-03-18 ...
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... Switching loss off 0.5 0.3 0.1 0 300 500 5 4 GT25Q102 Switching time – Common emitter 600 ± Ω 25° 125° Collector current I (A) C Switching time – I off off t f Common emitter 600 ± ...
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... C oes C res 200 0 300 1000 0 (V) 100 50 50 µ < = 125°C 0.5 0 ± Ω 0.1 1000 3000 1 3 (V) Collector-emitter voltage GT25Q102 – 400 600 200 120 160 200 Gate charge Q (nC) G Reverse bias SOA 10 30 100 300 1000 3000 (V) CE 2003-03-18 ...
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... TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. • The information contained herein is subject to change without notice. 6 GT25Q102 000707EAA 2003-03-18 ...