GT25Q102 Toshiba, GT25Q102 Datasheet - Page 3

• Manufacturer Part Number: GT25Q102
• Description: IGBT, 1200V, TO-3P(LH)
• Manufacturer: Toshiba

Specifications of GT25Q102

• Transistor Type: IGBT
• Dc Collector Current: 25A
• Collector Emitter Voltage Vces: 2.7V
• Power Dissipation Max: 200W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -55°C To +150°C
• Power Dissipation Pd: 200W
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

50
40
30
20
10
20
16
12
50
40
30
20
10
0
8
4
0
0
0
0
0
Common emitter
Tc = 25°C
Common emitter
Tc = 25°C
Common emitter
V CE = 5 V
Collector-emitter voltage V
Tc = 125°C
4
Gate-emitter voltage V
Gate-emitter voltage V
1
4
I C = 10 A
20
V
8
25
2
8
I
I
CE
C
C
– V
– V
– V
15
GE
CE
GE
−40
25
12
12
3
GE
GE
50
CE
V GE = 9 V
(V)
(V)
16
10
16
4
(V)
20
20
5
3
20
16
12
20
16
12
4
3
2
1
0
−60
8
4
0
8
4
0
0
0
Common
emitter
V GE = 15 V
Common emitter
Tc = −40°C
Common emitter
Tc = 125°C
−20
Gate-emitter voltage V
Gate-emitter voltage V
4
4
I C = 10 A
Case temperature Tc (°C)
I C = 10 A
V
V
V
20
CE (sat)
8
8
CE
CE
– V
– V
25
– Tc
GE
GE
12
12
60
50
GE
GE
25
50
(V)
(V)
I C = 10 A
100
16
16
GT25Q102
50
25
2003-03-18
140
20
20