SST201-T1-E3 Vishay, SST201-T1-E3 Datasheet - Page 2
![N CHANNEL JFET, -40V, TO-236](/photos/22/17/221705/4472336_sml.jpg)
SST201-T1-E3
Manufacturer Part Number
SST201-T1-E3
Description
N CHANNEL JFET, -40V, TO-236
Manufacturer
Vishay
Datasheet
1.SST204-E3.pdf
(6 pages)
Specifications of SST201-T1-E3
Breakdown Voltage Vbr
-40V
Gate-source Cutoff Voltage Vgs(off) Max
-1.5V
Power Dissipation Pd
350mW
Operating Temperature Range
-55°C To +150°C
No. Of Pins
3
Peak Reflow Compatible (260 C)
Yes
Continuous Drain Current Id
200µA
Rohs Compliant
Yes
Transistor Type
JFET
Zero Gate Voltage Drain Current Idss
200µA To 1mA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SST201-T1-E3
Manufacturer:
SIEMENS
Quantity:
100
J/SST201 Series
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
Gate-Drain, Gate-Source Voltage
Gate Current
Lead Temperature (
Storage Temperature
Notes
a.
b.
c.
www.vishay.com
2
SPECIFICATIONS (T
Static
Gate-Source
Breakdown Voltage
Gate-Source Cutoff Voltage
Saturation Drain Current
Gate Reverse Current
Gate Reverse Current
Gate Operating Current
Drain Cutoff Current
Gate-Source Forward Voltage
Dynamic
Common-Source
Forward Transconductance
Common-Source
Input Capacitance
Common-Source
Reverse Transfer Capacitance
Equivalent Input Noise Voltage
Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
Pulse test: PW v300 ms duty cycle v3%.
See 2N/SST5484 Series for J204 and SST204 typical characteristic curves.
Parameter
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1
/
16
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
” from case for 10 sec.)
b
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
A
= 25_C UNLESS OTHERWISE NOTED)
Symbol
V
V
V
(BR)GSS
I
I
I
GS(off)
I
C
D(off)
C
GS(F)
DSS
GSS
GSS
g
e
I
G
rss
iss
fs
n
. . . . . . . . . . . . . . . . . . .
V
V
V
V
V
I
V
V
V
V
Test Conditions
I
G
DG
GS
DS
G
DS
DS
DS
DS
DS
DS
= −1 mA , V
= 1 mA , V
−55 to 150_C
= −20 V, V
= 10 V, I
= 15 V, V
= 15 V, V
= 15 V, I
= 15 V, V
= 15 V, V
= 15 V, V
= 10 V, V
f = 1 MHz
f = 1 kHz
f = 1 kHz
50 mA
300_C
−40 V
D
D
GS
T
DS
DS
GS
GS
GS
GS
GS
= 0.1 mA
DS
= 10 nA
A
= −5 V
= 125_C
= 0 V
= 0 V
= 0 V
= 0 V
= 0 V
= 0 V
= 0 V
= 0 V
Operating Junction Temperature
Power Dissipation
Notes
a.
Typ
Derate 2.8 mW/_C above 25_C
0.7
4.5
1.3
−2
−1
−2
2
6
a
Min
−0.3
−40
0.2
0.5
J/SST201
a
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Max
−100
−1.5
1
Min
−0.8
−40
0.9
. . . . . . . . . . . . . . . . . . . . . . . . .
1
J/SST202
Limits
Max
−100
4.5
−4
S-40393—Rev. G, 15-Mar-04
Document Number: 70233
Min
−0.3
−25
0.2
0.5
J/SST204
Max
−100
−55 to 150_C
−2
3
c
350 mW
NPA, NH
Unit
√Hz
mA
mS
nV⁄
pA
nA
pA
pA
pF
pF
V
V
V