SST201-T1-E3 Vishay, SST201-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SST201-T1-E3
• Description: N CHANNEL JFET, -40V, TO-236
• Manufacturer: Vishay

Specifications of SST201-T1-E3

• Breakdown Voltage Vbr: -40V
• Gate-source Cutoff Voltage Vgs(off) Max: -1.5V
• Power Dissipation Pd: 350mW
• Operating Temperature Range: -55°C To +150°C
• No. Of Pins: 3
• Peak Reflow Compatible (260 C): Yes
• Continuous Drain Current Id: 200µA
• Rohs Compliant: Yes
• Transistor Type: JFET
• Zero Gate Voltage Drain Current Idss: 200µA To 1mA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Document Number: 70233
S-40393—Rev. G, 15-Mar-04
TYPICAL CHARACTERISTICS (T
1500
1200
900
600
300
400
360
240
160
10
80
8
6
4
2
0
0
0
0
0
0
On-Resistance and Output Conductance
I
g
f = 1 kHz
DSS
Drain Current and Transconductance
fs
@ V
V
V
V
r
g
@ V
vs. Gate-Source Cutoff Voltage
GS(off)
DS
vs. Gate-Source Cutoff Voltage
GS(off)
os
GS(off)
−1
−1
4
DS
@ I
@ V
r
V
DS
DS
Output Characteristics
DS
= 10 V, V
g
− Gate-Source Cutoff Voltage (V)
= −0.7 V
fs
D
− Gate-Source Cutoff Voltage (V)
= 10 V, V
DS
− Drain-Source Voltage (V)
= 100 mA, V
= 10 V, V
−0.5 V
−2
−2
8
GS
GS
= 0 V
= 0 V
GS
GS
g
= 0 V, f = 1 kHz
= 0 V
os
−3
12
−3
I
DSS
V
−4
A
−4
16
GS
−0.1 V
−0.2 V
−0.3 V
−0.4 V
= 25_C UNLESS OTHERWISE NOTED)
= 0 V
−5
−5
20
5
4
3
2
1
0
10
8
6
4
2
0
100 pA
0.1 pA
10 nA
10 pA
1 nA
1 pA
1.6
1.2
0.8
0.4
1.6
1.2
0.8
0.4
2
0
2
0
0.01
0
Common-Source Forward Transconductance
0
V
T
A
GS(off)
T
= 25_C
A
V
= 125_C
GS(off)
4
= −1.5 V
V
V
DS
Output Characteristics
Gate Leakage Current
= −1.5 V
DG
I
− Drain-Source Voltage (V)
D
vs. Drain Current
− Drain-Gate Voltage (V)
J/SST201 Series
− Drain Current (mA)
−1.2 V
I
D
I
D
8
= 100 mA
I
GSS
= 500 mA
25_C
Vishay Siliconix
0.1
15
@ 125_C
I
G
T
125_C
A
@ I
12
= −55_C
D
I
V
f = 1 kHz
GSS
= 500 mA
DS
I
D
V
= 10 V
@ 25_C
= 100 mA
GS
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16
−0.3 V
−0.6 V
−0.9 V
= 0 V
30
20
1
3