SI9933CDY-T1-E3 Vishay, SI9933CDY-T1-E3 Datasheet
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SI9933CDY-T1-E3
Specifications of SI9933CDY-T1-E3
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SI9933CDY-T1-E3 Summary of contents
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... Top View Ordering Information: Si9933CDY-T1-E3 (Lead (Pb)-free) Si9933CDY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current (10 µs Pulse Width) Source-Drain Current Diode Current Single Pulse Avalanche Current Single-Pulse Avalanche Energy ...
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... Si9933CDY Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current b On-State Drain Current b Drain-Source On-State Resistance b Forward Transconductance a Dynamic Input Capacitance Output Capacitance ...
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... 1 1200 900 600 300 15 20 1.6 1.5 1.4 1.3 1 1.1 1.0 0.9 0.8 0 Si9933CDY Vishay Siliconix ° 125 ° °C C 0.0 0.5 1.0 1.5 2 Gate-to-Source Voltage (V) GS Transfer Characteristics C iss C oss C rss Drain-to-Source Voltage (V) DS Capacitance 4.5 V ...
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... Si9933CDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 150 ° 0.1 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0 Temperature (°C) J Threshold Voltage www.vishay.com 4 New Product 0.08 0.06 0. ° ...
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... T - Case Temperature (°C) C Current Derating* 1.5 1.2 0.9 0.6 0.3 0.0 100 125 150 0 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper Si9933CDY Vishay Siliconix 150 100 125 T - Ambient Temperature (°C) A Power Derating, Junction-to-Ambient www.vishay.com 150 5 ...
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... Si9933CDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...
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