SI9933CDY-T1-E3 Vishay, SI9933CDY-T1-E3 Datasheet

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SI9933CDY-T1-E3

Manufacturer Part Number
SI9933CDY-T1-E3
Description
DUAL P CHANNEL MOSFET, -20V, SOIC
Manufacturer
Vishay
Datasheet

Specifications of SI9933CDY-T1-E3

Transistor Polarity
P Channel
Continuous Drain Current Id
-4A
Drain Source Voltage Vds
-20V
On Resistance Rds(on)
94mohm
Rds(on) Test Voltage Vgs
12V
Threshold Voltage Vgs Typ
-1.4V
Configuration
Dual Dual Drain
Resistance Drain-source Rds (on)
0.058 Ohms
Drain-source Breakdown Voltage
- 20 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
4 A
Power Dissipation
2 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOIC-8 Narrow
Minimum Operating Temperature
- 50 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI9933CDY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes:
a. Based on T
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 110 °C/W.
e. Package Limited.
Document Number: 68791
S-81729-Rev. A, 04-Aug-08
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current (10 µs Pulse Width)
Source-Drain Current Diode Current
Single Pulse Avalanche Current
Single-Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
PRODUCT SUMMARY
V
Ordering Information: Si9933CDY-T1-E3 (Lead (Pb)-free)
DS
- 20
(V)
C
0.058 at V
0.094 at V
G
G
= 25 °C.
S
S
1
1
2
2
R
1
2
3
4
DS(on)
Si9933CDY-T1-GE3 (Lead (Pb)-free and Halogen-free)
GS
GS
Top View
(Ω)
= - 4.5 V
= - 2.5 V
J
SO-8
= 150 °C)
b, d
Dual P-Channel 20-V (D-S) MOSFET
8
7
6
5
I
D
(A)
- 4
- 4
D
D
D
D
1
1
2
2
a, e
A
= 25 °C, unless otherwise noted
Q
g
Steady State
(Typ.)
8
New Product
t ≤ 10 s
T
T
T
T
T
T
L = 0.1 mH
T
T
T
T
C
C
A
A
C
A
C
C
A
A
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
APPLICATIONS
• Halogen-free Option Available
• TrenchFET
• 100 % R
• Load Switch
• DC/DC Converter
Symbol
R
R
thJA
thJF
Symbol
T
J
V
V
E
I
I
P
, T
I
DM
I
AS
DS
GS
AS
D
S
D
g
stg
and UIS Tested
®
G
Power MOSFET
1
Typical
P-Channel MOSFET
52
32
Limit
S
D
1
1
- 50 to 150
- 4
- 3.8
- 1.7
1.28
Limit
± 12
- 2.5
Maximum
- 20
- 20
2
- 4
- 4
1.8
3.1
- 6
b, c, e
b, c
2
e
e
b, c
b, c
b, c
62.5
Vishay Siliconix
40
G
Si9933CDY
2
P-Channel MOSFET
www.vishay.com
D
S
°C/W
2
2
Unit
RoHS
COMPLIANT
Unit
mJ
°C
W
V
A
1

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SI9933CDY-T1-E3 Summary of contents

Page 1

... Top View Ordering Information: Si9933CDY-T1-E3 (Lead (Pb)-free) Si9933CDY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current (10 µs Pulse Width) Source-Drain Current Diode Current Single Pulse Avalanche Current Single-Pulse Avalanche Energy ...

Page 2

... Si9933CDY Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current b On-State Drain Current b Drain-Source On-State Resistance b Forward Transconductance a Dynamic Input Capacitance Output Capacitance ...

Page 3

... 1 1200 900 600 300 15 20 1.6 1.5 1.4 1.3 1 1.1 1.0 0.9 0.8 0 Si9933CDY Vishay Siliconix ° 125 ° °C C 0.0 0.5 1.0 1.5 2 Gate-to-Source Voltage (V) GS Transfer Characteristics C iss C oss C rss Drain-to-Source Voltage (V) DS Capacitance 4.5 V ...

Page 4

... Si9933CDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 150 ° 0.1 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0 Temperature (°C) J Threshold Voltage www.vishay.com 4 New Product 0.08 0.06 0. ° ...

Page 5

... T - Case Temperature (°C) C Current Derating* 1.5 1.2 0.9 0.6 0.3 0.0 100 125 150 0 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper Si9933CDY Vishay Siliconix 150 100 125 T - Ambient Temperature (°C) A Power Derating, Junction-to-Ambient www.vishay.com 150 5 ...

Page 6

... Si9933CDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...

Page 7

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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