SI9933CDY-T1-E3 Vishay, SI9933CDY-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: SI9933CDY-T1-E3
• Description: DUAL P CHANNEL MOSFET, -20V, SOIC
• Manufacturer: Vishay

Specifications of SI9933CDY-T1-E3

• Transistor Polarity: P Channel
• Continuous Drain Current Id: -4A
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 94mohm
• Rds(on) Test Voltage Vgs: 12V
• Threshold Voltage Vgs Typ: -1.4V
• Configuration: Dual Dual Drain
• Resistance Drain-source Rds (on): 0.058 Ohms
• Drain-source Breakdown Voltage: - 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 4 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Minimum Operating Temperature: - 50 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Si9933CDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
100
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.1
10
- 50
1
0.0
Source-Drain Diode Forward Voltage
- 25
0.2
V
SD
0
T
J
Threshold Voltage
- Source-to-Drain Voltage (V)
T
= 150 °C
0.4
J
25
- Temperature (°C)
50
0.6
75
0.01
100
0.8
0.1
10
1
I
0.1
D
100
= 250 µA
Safe Operating Area, Junction-to-Ambient
T
* V
J
Single Pulse
Limited by R
= 25 °C
T
1.0
GS
A
125
= 25 °C
> minimum V
V
New Product
DS
150
1.2
DS(on)
- Drain-to-Source Voltage (V)
1
*
GS
BVDSS Limited
at which R
10
DS(on)
0.08
0.06
0.04
0.02
50
40
30
20
10
0
0
0
is specified
0 .
0
1 ms
10 ms
100 ms
1 s
10 s
DC
0
1
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
2
100
V
0.01
GS
- Gate-to-Source Voltage (V)
4
Time (s)
0.1
6
S-81729-Rev. A, 04-Aug-08
Document Number: 68791
8
I
1
D
T
J
= - 4.8 A
T
J
= 25 °C
10
= 125 °C
12
10