SI9933CDY-T1-E3 Vishay, SI9933CDY-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI9933CDY-T1-E3
• Description: DUAL P CHANNEL MOSFET, -20V, SOIC
• Manufacturer: Vishay

Specifications of SI9933CDY-T1-E3

• Transistor Polarity: P Channel
• Continuous Drain Current Id: -4A
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 94mohm
• Rds(on) Test Voltage Vgs: 12V
• Threshold Voltage Vgs Typ: -1.4V
• Configuration: Dual Dual Drain
• Resistance Drain-source Rds (on): 0.058 Ohms
• Drain-source Breakdown Voltage: - 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 4 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Minimum Operating Temperature: - 50 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 68791
S-81729-Rev. A, 04-Aug-08
0.16
0.12
0.08
0.04
0.00
10
20
16
12
On-Resistance vs. Drain Current and Gate Voltage
8
6
4
2
0
8
4
0
0
0
0
I
D
V
= 4.8 A
GS
3
1
V
= 2.5 V
DS
5
Q
Output Characteristics
g
- Drain-to-Source Voltage (V)
I
D
- Total Gate Charge (nC)
6
V
Gate Charge
- Drain Current (A)
GS
V
2
DS
= 5 thru 3.5 V
V
GS
= 10 V
10
9
= 4.5 V
V
DS
3
12
= 16 V
15
V
V
V
GS
V
GS
4
15
GS
GS
= 1.5 V
= 2.5 V
= 3 V
= 2 V
New Product
18
20
5
1200
900
600
300
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
- 50
0.0
0
I
C
D
On-Resistance vs. Junction Temperature
rss
- 25
= 20 A
C
0.5
4
oss
V
V
Transfer Characteristics
GS
DS
T
0
J
C
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
iss
- Drain-to-Source Voltage (V)
T
V
C
GS
25
= 125 °C
1.0
Capacitance
8
T
= - 4.5 V; I
C
= 25 °C
50
V
GS
Vishay Siliconix
1.5
12
D
= - 2.5 V; I
75
= - 4.8 A
Si9933CDY
100
T
C
www.vishay.com
2.0
16
= - 55 °C
D
= - 3.8 A
125
150
2.5
20
3