SI9926BDY-T1-GE3 Vishay, SI9926BDY-T1-GE3 Datasheet

no-image

SI9926BDY-T1-GE3

Manufacturer Part Number
SI9926BDY-T1-GE3
Description
DUAL N CHANNEL MOSFET, 20V, 6.2A
Manufacturer
Vishay
Datasheet

Specifications of SI9926BDY-T1-GE3

Transistor Polarity
N Channel
Continuous Drain Current Id
6.2A
Drain Source Voltage Vds
20V
On Resistance Rds(on)
20mohm
Rds(on) Test Voltage Vgs
4.5V
Threshold Voltage Vgs Typ
600mV
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI9926BDY-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
Document Number: 72278
S09-0870-Rev. C, 18-May-09
Ordering Information:
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
PRODUCT SUMMARY
V
DS
20
G
G
(V)
S
S
1
1
2
2
1
2
3
4
Si9926BDY -T1-E3
Si9926BDY-T1-GE3 (Lead (Pb)-free and Halogen-free)
T op V i e w
SO-8
0.020 at V
0.030 at V
R
DS(on)
J
a
= 150 °C)
Dual N-Channel 2.5-V (G-S) MOSFET
a
GS
GS
8
7
6
5
(Ω)
= 4.5 V
= 2.5 V
(Lead (Pb)-free)
D
D
D
D
1
1
2
2
a
a
A
= 25 °C, unless otherwise noted
I
Steady State
Steady State
D
8.2
6.7
T
T
T
T
(A)
A
A
A
A
t ≤ 10 s
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• Compliant to RoHS Directive 2002/95/EC
Symbol
Symbol
T
R
R
Definition
J
V
V
I
P
, T
I
DM
thJA
thJF
I
DS
GS
D
S
D
stg
G
1
N-Channel MOSFET
®
Power MOSFETS
Typical
10 s
D
S
8.2
6.5
1.7
2.0
1.3
52
90
32
1
1
- 55 to 150
± 12
20
30
Steady State
G
Maximum
2
0.95
1.14
0.72
62.5
110
N-Channel MOSFET
6.2
4.9
40
Vishay Siliconix
Si9926BDY
D
S
2
2
www.vishay.com
°C/W
Unit
Unit
°C
W
V
A
1

Related parts for SI9926BDY-T1-GE3

SI9926BDY-T1-GE3 Summary of contents

Page 1

... Ordering Information: Si9926BDY -T1-E3 (Lead (Pb)-free) Si9926BDY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source Current (Diode Conduction) a Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... Si9926BDY Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time ...

Page 3

... Gate Charge 150 ° 0.3 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage Document Number: 72278 S09-0870-Rev. C, 18-May- 4 °C J 0.9 1.2 1.5 Si9926BDY Vishay Siliconix 1600 1400 C iss 1200 1000 800 600 C oss 400 200 C rss Drain-to-Source Voltage (V) DS Capacitance ...

Page 4

... Si9926BDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0 250 µA D 0.2 0.0 - 0.2 - 0 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com 4 75 100 125 150 100 Limited DS(on D(on) 1 Limited ° ...

Page 5

... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?72278. Document Number: 72278 S09-0870-Rev. C, 18-May- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si9926BDY Vishay Siliconix -1 1 www.vishay.com 10 5 ...

Page 6

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

Related keywords