SI9926BDY-T1-GE3 Vishay, SI9926BDY-T1-GE3 Datasheet - Page 4

• Manufacturer Part Number: SI9926BDY-T1-GE3
• Description: DUAL N CHANNEL MOSFET, 20V, 6.2A
• Manufacturer: Vishay

Specifications of SI9926BDY-T1-GE3

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 6.2A
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 20mohm
• Rds(on) Test Voltage Vgs: 4.5V
• Threshold Voltage Vgs Typ: 600mV
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Si9926BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
- 0.2
- 0.4
- 0.6
0.4
0.2
0.0
0.01
0.1
- 50
2
1
10
-4
- 25
Single Pulse
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0
Threshold Voltage
T
I
D
J
= 250 µA
- Temperature (°C)
10
25
-3
50
Normalized Thermal Transient Impedance, Junction-to-Ambient
75
0.01
100
0.1
10
10
100
1
0.1
-2
Limited by R
* V
Limited
I
125
D(on)
DS
Single Pulse
T
> minimum V
A
V
Square Wave Pulse Duration (s)
= 25 °C
150
DS
DS(on)
- Drain-to-Source Voltage (V)
Safe Operating Area
10
1
-1
BVDSS Limited
*
GS
at which R
DS(on)
10
1
50
40
30
10
20
0
0.001
is specified
I
DM
P(t) = 0.001
P(t) = 0.01
P(t) = 0.1
P(t) = 1
P(t) = 10
DC
Limited
0.01
100
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
Single Pulse Power
P
0.1
DM
JM
- T
t
Time (s)
A
1
S09-0870-Rev. C, 18-May-09
= P
t
2
1
DM
Document Number: 72278
Z
thJA
thJA
100
t
t
1
2
(t)
10
= 90 °C/W
100
600
600