SI9926BDY-T1-GE3 Vishay, SI9926BDY-T1-GE3 Datasheet - Page 5

• Manufacturer Part Number: SI9926BDY-T1-GE3
• Description: DUAL N CHANNEL MOSFET, 20V, 6.2A
• Manufacturer: Vishay

Specifications of SI9926BDY-T1-GE3

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 6.2A
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 20mohm
• Rds(on) Test Voltage Vgs: 4.5V
• Threshold Voltage Vgs Typ: 600mV
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?72278.
Document Number: 72278
S09-0870-Rev. C, 18-May-09
0.01
0.1
2
1
10
-4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
10
-3
Normalized Thermal Transient Impedance, Junction-to-Foot
Square Wave Pulse Duration (s)
10
-2
10
-1
1
Vishay Siliconix
Si9926BDY
www.vishay.com
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