2N7002K-T1-E3 Vishay, 2N7002K-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: 2N7002K-T1-E3
• Description: N-CH ENHANCEMENT MOSFET W/ ESD PROTECT
• Manufacturer: Vishay
• Series: TrenchFET®r
• Type: Power MOSFETr

Specifications of 2N7002K-T1-E3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 2 Ohm @ 500mA, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 300mA
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 0.6nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 30pF @ 25V
• Power - Max: 350mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.3 A
• Power Dissipation: 350 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Rohs Compliant: YES
• Continuous Drain Current Id: 500mA
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 7.5ohm
• Rds(on) Test Voltage Vgs: 10V
• Power Dissipation Pd: 200mW
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 2Ohm
• Drain-source On-volt: 60V
• Gate-source Voltage (max): ±20V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SOT-23
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 2N7002K-T1-E3TR

Notes
a.
b.
c.
d.
Document Number: 70226
S-04279—Rev. F, 16-Jul-01
Switching
Turn-On Time
Turn-Off Time
Turn-On Time
Turn-Off Time
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Common Source Output Conductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching
Turn-On Time
Turn-Off Time
Turn-On Time
Turn-Off Time
For DESIGN AID ONLY, not subject to production testing.
Pulse test: PW v80 ms duty cycle v1%.
This parameter not registered with JEDEC.
Switching time is essentially independent of operating temperature.
d
d
Parameter
Parameter
b
b
b
b
Symbol
Symbol
V
V
r
(BR)DSS
I
DS(on)
t
t
I
I
C
GS(th)
D(on)
C
t
t
t
t
C
OFF
OFF
GSS
GSS
DSS
DSS
g
t
t
OFF
OFF
ON
ON
g
ON
ON
oss
rss
os
iss
fs
I
I
I
I
D
D
V
D
D
^ 0.2 A, V
DS
^0.5 A, V
^ 0.6 A, V
^ 0.2 A, V
= 48 V, V
V
V
V
V
V
V
V
V
V
Test Conditions
V
V
V
V
V
V
V
V
V
V
DD
DD
Test Conditions
DS
DS
V
V
DS
V
DD
DD
DD
DD
GS
DS
DD
DD
DS
DS
GS
GS
DS
DS
DS
DS
GS
= 0 V, V
= 0 V, V
= 30 V, R
= 30 V, R
= 10 V, V
2N7000/2N7002, VQ1000J/P, BS170
= 25 V, R
= 25 V, R
= 15 V, R
= 15 V, R
= 10 V, I
= 0 V, I
= 25 V, V
= 60 V, V
= 15 V, R
= 15 V, R
= 10 V, I
= 10 V, I
= 10 V, I
= V
=25 V, V
=5 V, I
= 5 V, I
GEN
GEN
f = 1 MHz
f = 1 MHz
GEN
GEN
GS
GS
= 10 V, R
= 10 V, R
= 0 V, T
, I
= 10 V, R
= 10 V, R
GS
GS
D
D
_
D
L
L
D
D
D
D
L
L
GS
D
= 0.05 A
GS
L
L
= 100 mA
GS
GS
L
L
= 0.2 A
= 150 W
= 150 W
= "10 V
= "15 V
= 1 mA
= 0.2 A
= 0.3 A
= 0.2 A
= 125 W
= 125 W
= 25 W
= 25 W
_
= 0.5 A
= 23 W
= 23 W
= 10 V
= 0 V
= 0 V
= 0 V
J
G
G
T
T
= 125_C
G
G
J
J
= 25 W
= 25 W
= 25 W
= 25 W
= 125_C
= 125_C
Typ
Typ
11
2.1
2.3
2.3
4.2
0.5
70
22
11
7
7
7
1
4
2
7
7
7
7
a
a
Min
Min
100
0.8
0.5
60
VQ1000J/P
2N7000
Max
Vishay Siliconix
Max
"100
"500
500
2.5
7.5
5.5
7.6
10
10
10
60
25
10
10
5
Limits
Limits
Min
Min
100
0.8
60
2N7002
BS170
www.vishay.com
Max
Max
"10
0.5
20
20
60
10
10
3
5
VNBF06
Unit
Unit
mS
11-3
nA
mA
m
pF
ns
ns
W
W
V
A