2N7002K-T1-E3 Vishay, 2N7002K-T1-E3 Datasheet - Page 5

• Manufacturer Part Number: 2N7002K-T1-E3
• Description: N-CH ENHANCEMENT MOSFET W/ ESD PROTECT
• Manufacturer: Vishay
• Series: TrenchFET®r
• Type: Power MOSFETr

Specifications of 2N7002K-T1-E3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 2 Ohm @ 500mA, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 300mA
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 0.6nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 30pF @ 25V
• Power - Max: 350mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.3 A
• Power Dissipation: 350 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Rohs Compliant: YES
• Continuous Drain Current Id: 500mA
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 7.5ohm
• Rds(on) Test Voltage Vgs: 10V
• Power Dissipation Pd: 200mW
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 2Ohm
• Drain-source On-volt: 60V
• Gate-source Voltage (max): ±20V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SOT-23
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 2N7002K-T1-E3TR

Document Number: 70226
S-04279—Rev. F, 16-Jul-01
1.000
0.100
0.010
0.001
0.01
0.1
0.0
1
0.1
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Source-Drain Diode Forward Voltage
0.2
T
V
Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (TO-226AA, BS170 Only)
J
SD
= 125_C
0.01
Single Pulse
0.4
– Source-to-Drain Voltage (V)
0.6
1
0.8
T
J
= 25_C
–0.00
–0.25
–0.50
–0.75
0.50
0.25
1.0
–50
1.2
–25
_
t
1
– Square Wave Pulse Duration (sec)
1.4
10
0
Threshold Voltage
I
D
2N7000/2N7002, VQ1000J/P, BS170
25
= 250 mA
50
75
100
100
6
5
4
3
2
1
0
0
On-Resistance vs. Gate-to-Source Voltage
125
2
150
4
V
GS
– Gate-to-Source Voltage (V)
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
6
P
DM
500 mA
JM
I
D
= 50 mA
– T
8
t
1
1 K
A
Vishay Siliconix
= P
t
10
2
DM
Z
12
thJA
thJA
t
t
1
2
(t)
= 156_C/W
14
www.vishay.com
16
18
10 K
11-5
20