2N7002K-T1-E3 Vishay, 2N7002K-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: 2N7002K-T1-E3
• Description: N-CH ENHANCEMENT MOSFET W/ ESD PROTECT
• Manufacturer: Vishay
• Series: TrenchFET®r
• Type: Power MOSFETr

Specifications of 2N7002K-T1-E3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 2 Ohm @ 500mA, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 300mA
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 0.6nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 30pF @ 25V
• Power - Max: 350mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.3 A
• Power Dissipation: 350 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Rohs Compliant: YES
• Continuous Drain Current Id: 500mA
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 7.5ohm
• Rds(on) Test Voltage Vgs: 10V
• Power Dissipation Pd: 200mW
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 2Ohm
• Drain-source On-volt: 60V
• Gate-source Voltage (max): ±20V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SOT-23
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 2N7002K-T1-E3TR

2N7000/2N7002, VQ1000J/P, BS170
Vishay Siliconix
www.vishay.com
11-4
1.0
0.8
0.6
0.4
0.2
0.0
20
16
12
V
7
6
5
4
3
2
1
0
8
4
0
GS
0.0
0
0
= 10, 9, 8, 7 V
I
D
= 0.5 A
400
On-Resistance vs. Drain Current
1
0.2
V
DS
Q
Output Characteristics
g
– Drain-to-Source Voltage (V)
I
800
– Total Gate Charge (pC)
D
2
– Drain Current (A)
Gate Charge
0.4
1200
3
r
DS
r
0.6
DS
@ 5 V = V
1600
@ 10 V = V
V
4
DS
= 30 V
0.8
2000
GS
5
GS
3.5 V
6.5 V
6 V
5.5 V
5 V
4.5 V
4 V
3 V
_
2400
1.0
6
2.5 V
2, 1 V
1.0
0.8
0.6
0.4
0.2
0.0
2.0
1.5
1.0
0.5
0.0
60
50
40
30
20
10
0
–55
0
0
On-Resistance vs. Junction Temperature
V
f = 1 MHz
–30
GS
1
5
= 0 V
V
V
DS
T
Transfer Characteristics
GS
–5
2
J
V
– Junction Temperature (_C)
10
– Drain-to-Source Voltage (V)
GS
– Gate-to-Source Voltage (V)
= 10 V, r
20
Capacitance
3
C
15
T
V
rss
J
GS
= –55_C
45
DS
4
C
= 5 V, r
oss
@ 0.5 A
20
C
S-04279—Rev. F, 16-Jul-01
iss
70
Document Number: 70226
5
DS
25
@ 0.05 A
95
6
125_C
25_C
120
30
7
145
35
8