BSP297 Infineon Technologies, BSP297 Datasheet - Page 5
![N CH MOSFET, 200V, 600mA, SOT-223](/photos/19/8/190865/4467709_sml.jpg)
BSP297
Manufacturer Part Number
BSP297
Description
N CH MOSFET, 200V, 600mA, SOT-223
Manufacturer
Infineon Technologies
Datasheet
1.BSP297.pdf
(8 pages)
Specifications of BSP297
Transistor Polarity
N Channel
Continuous Drain Current Id
600mA
Drain Source Voltage Vds
200V
On Resistance Rds(on)
2ohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
1.4V
Package
SOT-223
Vds (max)
200.0 V
Rds (on) (max) (@10v)
1,800.0 mOhm
Rds (on) (max) (@4.5v)
3,000.0 mOhm
Rds (on) (max) (@2.5v)
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
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5 Typ. output characteristic
I
parameter: T
7 Typ. transfer characteristics
I
parameter: T
D
D
= f ( V
= f (V
1.3
1.1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
1.3
1.1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
A
A
1
0
1
0
0
0
DS
GS
3.4V
3.8V
4V
4.6V
5V
6V
10V
)
0.5
); V
0.4
j
j
= 25 °C, V
= 25 °C
DS
1
³ 2 x I
0.8
1.5
D
GS
1.2
x R
2
DS(on)max
2.5
1.6
V
V
2.8V
2.6V
V
V
Rev. 1.21
DS
GS
3.5
2.2
Page 5
6 Typ. drain-source on resistance
R
parameter: T
8 Typ. forward transconductance
g
parameter: T
fs
DS(on)
= f(I
W
4.5
3.5
2.5
1.5
0.5
1.4
1.2
1.1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
S
3
2
1
0
1
0
0
0
D
2.6V
2.8V
3.4V
3.8V
4V
4.6V
5V
6V
10V
= f (I
)
0.2
0.2
D
j
j
= 25 °C, V
= 25 °C
)
0.4
0.4
0.6
0.6
GS
0.8
0.8
2006-09-28
1
1
BSP297
A
A
I
I
D
D
1.3
1.3