BSP297 Infineon Technologies, BSP297 Datasheet - Page 6
![N CH MOSFET, 200V, 600mA, SOT-223](/photos/19/8/190865/4467709_sml.jpg)
BSP297
Manufacturer Part Number
BSP297
Description
N CH MOSFET, 200V, 600mA, SOT-223
Manufacturer
Infineon Technologies
Datasheet
1.BSP297.pdf
(8 pages)
Specifications of BSP297
Transistor Polarity
N Channel
Continuous Drain Current Id
600mA
Drain Source Voltage Vds
200V
On Resistance Rds(on)
2ohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
1.4V
Package
SOT-223
Vds (max)
200.0 V
Rds (on) (max) (@10v)
1,800.0 mOhm
Rds (on) (max) (@4.5v)
3,000.0 mOhm
Rds (on) (max) (@2.5v)
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
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9 Drain-source on-state resistance
R
parameter : I
11 Typ. capacitances
C = f (V
parameter: V
DS(on)
10
pF
10
10
W
8.5
7
6
5
4
3
2
1
0
-60
3
2
1
0
BSP297
DS
= f (T
)
-20
5
D
GS
j
)
= 0.66 A, V
=0, f=1 MHz, T
20
10
98%
typ
Crss
Coss
Ciss
60
15
GS
100
20
= 10 V
j
= 25 °C
°C
V
T
V
Rev. 1.21
j
DS
180
30
Page 6
10 Typ. gate threshold voltage
V
parameter: V
12 Forward character. of reverse diode
I
parameter: T j
F
GS(th)
= f (V
10
10
10
10
2.2
1.8
1.6
1.4
1.2
0.8
0.6
0.4
0.2
V
A
-1
-2
1
0
-60
1
0
0
= f (T j )
BSP297
SD
)
0.4
-20
GS
0.8
= V
20
DS ;
1.2
T
T
T
T
j
j
j
j
= 25 °C typ
= 150 °C typ
= 25 °C (98%)
= 150 °C (98%)
I
98%
typ.
2%
D
1.6
60
=400µA
2
100
2006-09-28
2.4
BSP297
°C
T
V
V
j
SD
160
3