IRF730APBF Vishay, IRF730APBF Datasheet - Page 4

• Manufacturer Part Number: IRF730APBF
• Description: N CHANNEL MOSFET, 400V, 5.5A TO-220
• Manufacturer: Vishay

Specifications of IRF730APBF

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 5.5A
• Drain Source Voltage Vds: 400V
• On Resistance Rds(on): 1ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4.5V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1 Ohm @ 3.3A, 10V
• Drain To Source Voltage (vdss): 400V
• Current - Continuous Drain (id) @ 25° C: 5.5A
• Vgs(th) (max) @ Id: 4.5V @ 250µA
• Gate Charge (qg) @ Vgs: 22nC @ 10V
• Input Capacitance (ciss) @ Vds: 600pF @ 25V
• Power - Max: 74W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Gate Charge Qg: 22 nC
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 1 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 3.1 S
• Drain-source Breakdown Voltage: 400 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 5.5 A
• Power Dissipation: 74000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRF730APBF

Document Number: 91045
100000
10000
1000
100
100
0.1
10
10
1
1
0.4
1
V
SD
V DS , Drain-to-Source Voltage (V)
T = 150 C
0.6
J
,Source-to-Drain Voltage (V)
V GS = 0V,
C iss = C gs + C gd , C ds
C rss = C gd
C oss = C ds + C gd
10
°
0.8
Crss
Ciss
Coss
T = 25 C
J
f = 1 MHZ
100
°
1.0
V
GS
SHORTED
= 0 V
1.2
1000
100
0.1
10
20
16
12
1
8
4
0
10
0
I =
T
T
Single Pulse
D
C
J
= 25 C
= 150 C
5.5
5.9A
OPERATION IN THIS AREA LIMITED
V
DS
°
Q , Total Gate Charge (nC)
5
°
G
, Drain-to-Source Voltage (V)
10
BY R
V
V
V
DS
DS
DS
100
DS(on)
= 320V
= 200V
= 80V
FOR TEST CIRCUIT
15
SEE FIGURE
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20
10us
100us
1ms
10ms
13
25
1000
4