IRF730APBF Vishay, IRF730APBF Datasheet - Page 7

N CHANNEL MOSFET, 400V, 5.5A TO-220

IRF730APBF

Manufacturer Part Number
IRF730APBF
Description
N CHANNEL MOSFET, 400V, 5.5A TO-220
Manufacturer
Vishay
Datasheets

Specifications of IRF730APBF

Transistor Polarity
N Channel
Continuous Drain Current Id
5.5A
Drain Source Voltage Vds
400V
On Resistance Rds(on)
1ohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4.5V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1 Ohm @ 3.3A, 10V
Drain To Source Voltage (vdss)
400V
Current - Continuous Drain (id) @ 25° C
5.5A
Vgs(th) (max) @ Id
4.5V @ 250µA
Gate Charge (qg) @ Vgs
22nC @ 10V
Input Capacitance (ciss) @ Vds
600pF @ 25V
Power - Max
74W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Gate Charge Qg
22 nC
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
1 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
3.1 S
Drain-source Breakdown Voltage
400 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
5.5 A
Power Dissipation
74000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
*IRF730APBF

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF730APBF
Manufacturer:
VISHAY
Quantity:
20 000
Part Number:
IRF730APBF
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
IRF730APBF
Quantity:
70 000
Document Number: 91045
Re-Applied
Voltage
Reverse
Recovery
Current

+
-
D.U.T
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
P.W.
SD
DS
Waveform
Waveform
Ripple ≤ 5%
Body Diode
Period
Body Diode Forward
+
-
ƒ
Diode Recovery
Current
dv/dt
Forward Drop
di/dt
D =
-
Period
P.W.
+
V
V
I
SD
GS
DD
=10V
+
-
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7

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