IRF840APBF Vishay, IRF840APBF Datasheet
IRF840APBF
Specifications of IRF840APBF
Available stocks
Related parts for IRF840APBF
IRF840APBF Summary of contents
Page 1
... Full Bridge l Document Number: 91065 SMPS MOSFET HEXFET V Rds(on) max DSS 500V @ 10V GS @ 10V GS - 150 300 (1.6mm from case ) 10 lbf•in (1.1N•m) PD- 94829 ® Power MOSFET I D 0.85Ω 8. TO-220AB Max. Units 8.0 5 125 W 1.0 W/°C ± 5.0 V/ns °C www.vishay.com 1 ...
Page 2
... Intrinsic turn-on time is negligible (turn-on is dominated by L Conditions = 250µ 1mA D = 4.8A 250µ 0V 125° Conditions = 4.8A D = 1.0V, ƒ = 1.0MHz DS = 400V, ƒ = 1.0MHz 400V DS Max. Units 510 mJ 8 Max. Units 1.0 ––– °C/W 62 Conditions 8.0A 8. www.vishay.com 2 ...
Page 3
... 2.5 2.0 1.5 1.0 0.5 = 50V 0.0 -60 -40 -20 8.0 9.0 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 4.5V 20µs PULSE WIDTH ° 150 Drain-to-Source Voltage (V) DS 7.4A 8 10V 100 120 140 160 ° Junction Temperature ( C) J www.vishay.com 100 3 ...
Page 4
... 150 Single Pulse GS 0.1 10 1.1 1 400V 250V 100V DS FOR TEST CIRCUIT SEE FIGURE Total Gate Charge (nC) G OPERATION IN THIS AREA LIMITED BY R DS(on) 10us 100us 1ms 10ms ° ° 100 1000 V , Drain-to-Source Voltage (V) DS www.vishay.com 40 10000 4 ...
Page 5
... T , Case Temperature ( 0.50 0.20 0.10 0.1 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) 0.01 0.00001 0.0001 Document Number: 91065 V DS 90% 125 150 ° 10 d(on) Notes: 1. Duty factor Peak 0.001 0. Rectangular Pulse Duration (sec ≤ 1 ≤ 0 d(off thJC C 0.1 1 www.vishay.com 5 ...
Page 6
... Fig 12c. Maximum Avalanche Energy 600 580 560 540 + 520 0.0 1.0 Fig 12d. Typical Drain-to-Source Voltage I D TOP 3.6A 5.1A BOTTOM 8. 100 125 ° J Vs. Drain Current 2.0 3.0 4.0 5.0 6.0 7 Avalanche Current ( A) Vs. Avalanche Current www.vishay.com 150 8.0 6 ...
Page 7
... Reverse Recovery Current D.U. Re-Applied Voltage Inductor Curent Document Number: 91065 + • • • - - • • • • P.W. Period D = Period Waveform Body Diode Forward Current di/dt Waveform Diode Recovery dv/dt Body Diode Forward Drop Ripple ≤ =10V www.vishay.com 7 ...
Page 8
... LEAD ASSIGNMENTS HEXFET IGBTs, CoPACK 1 - GATE 2 - DRAIN 1- GATE 1- GATE 2- DRAIN 3 - SOURCE 2- COLLECTOR 3- SOURCE 3- EMITTER 4 - DRAIN 4- DRAIN 4- COLLECTOR 0.55 (.022) 3X 0.46 (.018) 2.92 (.115) 2.64 (.104) PAR DAT E CODE 1997 INE C is rising from DSS TAC Fax: (310) 252-7903 www.vishay.com 11/03 8 ...
Page 9
... Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. ...