IRF840APBF Vishay, IRF840APBF Datasheet - Page 8
![N CHANNEL MOSFET, 500V, 8A, TO-220](/photos/5/29/52977/698-to-220ab_sml.jpg)
IRF840APBF
Manufacturer Part Number
IRF840APBF
Description
N CHANNEL MOSFET, 500V, 8A, TO-220
Manufacturer
Vishay
Type
Power MOSFETr
Specifications of IRF840APBF
Transistor Polarity
N Channel
Continuous Drain Current Id
8A
Drain Source Voltage Vds
500V
On Resistance Rds(on)
850mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
850 mOhm @ 4.8A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
8A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
38nC @ 10V
Input Capacitance (ciss) @ Vds
1018pF @ 25V
Power - Max
125W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.85 Ohm @ 10 V
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
8 A
Power Dissipation
125000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.85Ohm
Drain-source On-volt
500V
Gate-source Voltage (max)
±30V
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3 +Tab
Package Type
TO-220AB
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
*IRF840APBF
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRF840APBF
Manufacturer:
INFINEON
Quantity:
21 000
Company:
Part Number:
IRF840APBF
Manufacturer:
VISHAY
Quantity:
4 250
Part Number:
IRF840APBF
Manufacturer:
VISHAY/威世
Quantity:
20 000
Document Number: 91065
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
Notes:
I
Repetitive rating; pulse width limited by
T
R
SD
max. junction temperature. ( See fig. 11 )
Starting T
J
G
≤ 150°C
≤ 8.0A, di/dt ≤ 100A/µs, V
= 25Ω, I
J
NOTES:
= 25°C, L = 16 mH
AS
1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
2 CONTROLLING DIMENSION : INCH
14.09 (.555)
13.47 (.530)
15.24 (.600)
14.84 (.584)
E XAMPLE :
= 8.0A. (See Figure 12)
2.87 (.113)
2.62 (.103)
3X
2.54 (.100)
1.40 (.055)
1.15 (.045)
2X
Note: "P" in assembly line
position indicates "Lead-Free"
T H IS IS AN IRF 1010
LOT CODE 1789
AS S E MB L E D ON WW 19, 1997
IN T H E AS S E MB LY L INE "C"
10.54 (.415)
10.29 (.405)
1
DD
2 3
≤ V
4
3X
(BR)DSS
0.36 (.014)
6.47 (.255)
6.10 (.240)
0.93 (.037)
0.69 (.027)
1.15 (.045)
4.06 (.160)
3.55 (.140)
MIN
3.78 (.149)
3.54 (.139)
,
M
- A -
B A M
Data and specifications subject to change without notice.
INT E R NAT IONAL
3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.
4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.
R E CT IF IE R
AS S E MB LY
L OT CODE
Pulse width ≤ 300µs; duty cycle ≤ 2%.
L OGO
C
as C
4.69 (.185)
4.20 (.165)
oss
eff. is a fixed capacitance that gives the same charging time
oss
while V
- B -
1.32 (.052)
1.22 (.048)
2.92 (.115)
2.64 (.104)
DS
3X
HEXFET
1- GATE
2- DRAIN
3- SOURCE
4- DRAIN
0.55 (.022)
0.46 (.018)
is rising from 0 to 80% V
LEAD ASSIGNMENTS
LEAD ASSIGNMENTS
1 - GATE
2 - DRAIN
3 - SOURCE
4 - DRAIN
DAT E CODE
YE AR 7 = 1997
WE E K 19
L INE C
PAR T NU MB E R
IGBTs, CoPACK
1- GATE
2- COLLECTOR
3- EMITTER
4- COLLECTOR
TAC Fax: (310) 252-7903
DSS
www.vishay.com
11/03
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