IRF840APBF Vishay, IRF840APBF Datasheet - Page 3

• Manufacturer Part Number: IRF840APBF
• Description: N CHANNEL MOSFET, 500V, 8A, TO-220
• Manufacturer: Vishay
• Type: Power MOSFETr

Specifications of IRF840APBF

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 8A
• Drain Source Voltage Vds: 500V
• On Resistance Rds(on): 850mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 850 mOhm @ 4.8A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 8A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 38nC @ 10V
• Input Capacitance (ciss) @ Vds: 1018pF @ 25V
• Power - Max: 125W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.85 Ohm @ 10 V
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 8 A
• Power Dissipation: 125000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.85Ohm
• Drain-source On-volt: 500V
• Gate-source Voltage (max): ±30V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Package Type: TO-220AB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRF840APBF

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Document Number: 91065
S11-0506-Rev. B, 21-Mar-11
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
91065_01
91065_02
Fig. 2 - Typical Output Characteristics, T
10
10
0.1
0.1
Fig. 1 - Typical Output Characteristics, T
10
10
1
1
2
2
0.1
0.1
Top
Bottom
Top
Bottom
V
V
DS
DS
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
V
V
, Drain-to-Source Voltage (V)
, Drain-to-Source Voltage (V)
GS
GS
1
1
20 µs Pulse Width
T
20 µs Pulse Width
T
10
10
C
C
=
=
25 °C
150 °C
4.5 V
This datasheet is subject to change without notice.
4.5 V
C
C
= 150 °C
= 25 °C
10
10
2
2
91065_03
91065_04
Fig. 4 - Normalized On-Resistance vs. Temperature
10
0.1
3.0
2.5
2.0
1.5
1.0
0.5
0.0
10
1
2
- 60 - 40 - 20
4.0
I
V
Fig. 3 - Typical Transfer Characteristics
D
T
GS
= 8.0 A
J
= 150
= 10 V
V
5.0
GS ,
T
°
J ,
IRF840A, SiHF840A
C
Gate-to-Source Voltage (V)
0
Junction Temperature (°C)
T
J
20 40 60 80 100 120 140 160
= 25
6.0
°
C
www.vishay.com/doc?91000
Vishay Siliconix
7.0
20 µs Pulse Width
V
DS
=
50 V
8.0
www.vishay.com
9.0
3