IRF840APBF Vishay, IRF840APBF Datasheet - Page 5

• Manufacturer Part Number: IRF840APBF
• Description: N CHANNEL MOSFET, 500V, 8A, TO-220
• Manufacturer: Vishay
• Type: Power MOSFETr

Specifications of IRF840APBF

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 8A
• Drain Source Voltage Vds: 500V
• On Resistance Rds(on): 850mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 850 mOhm @ 4.8A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 8A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 38nC @ 10V
• Input Capacitance (ciss) @ Vds: 1018pF @ 25V
• Power - Max: 125W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.85 Ohm @ 10 V
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 8 A
• Power Dissipation: 125000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.85Ohm
• Drain-source On-volt: 500V
• Gate-source Voltage (max): ±30V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Package Type: TO-220AB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRF840APBF

Document Number: 91065
S11-0506-Rev. B, 21-Mar-11
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
91065_09
Fig. 9 - Maximum Drain Current vs. Case Temperature
8.0
6.0
4.0
2.0
0.0
91065_11
25
10
0.1
10
-2
1
10
50
-5
T
D = 0.5
0.2
0.1
0.05
0.02
0.01
C
, Case Temperature (°C)
75
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
100
10
-4
Single Pulse
(Thermal Response)
125
This datasheet is subject to change without notice.
t
1
150
, Rectangular Pulse Duration (s)
10
-3
10
-2
90 %
10 %
Fig. 10a - Switching Time Test Circuit
Fig. 10b - Switching Time Waveforms
V
V
DS
GS
R
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
G
10 V
V
Notes:
1. Duty Factor, D = t
2. Peak T
GS
t
d(on)
V
0.1
IRF840A, SiHF840A
DS
t
r
j
= P
P
DM
DM
D.U.T.
x Z
www.vishay.com/doc?91000
t
1
Vishay Siliconix
1
thJC
R
/t
D
2
t
d(off)
t
2
+ T
C
1
t
f
+
-
www.vishay.com
V
DD
5