IRFB11N50APBF Vishay, IRFB11N50APBF Datasheet - Page 2

• Manufacturer Part Number: IRFB11N50APBF
• Description: N CHANNEL MOSFET, 500V, 11A, TO-220
• Manufacturer: Vishay
• Type: Power MOSFETr

Specifications of IRFB11N50APBF

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 11A
• Drain Source Voltage Vds: 500V
• On Resistance Rds(on): 520mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 520 mOhm @ 6.6A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 52nC @ 10V
• Input Capacitance (ciss) @ Vds: 1423pF @ 25V
• Power - Max: 170W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.52 Ohm @ 10 V
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 11 A
• Power Dissipation: 170000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.52Ohm
• Drain-source On-volt: 500V
• Gate-source Voltage (max): ±30V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Package Type: TO-220AB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRFB11N50APBF

Document Number: 91094
Static @ T
Avalanche Characteristics
Thermal Resistance
Dynamic @ T
Diode Characteristics
E
I
E
R
R
R
V
R
V
I
I
I
I
V
t
Q
t
g
Q
Q
Q
t
t
t
t
C
C
C
C
C
C
AR
DSS
GSS
S
SM
on
d(on)
d(off)
rr
r
f
AS
AR
(BR)DSS
GS(th)
fs
θJC
θCS
θJA
SD
DS(on)
iss
oss
rss
oss
oss
oss
rr
g
gs
gd
eff.
Drain-to-Source Breakdown Voltage
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
J
= 25°C (unless otherwise specified)
J
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
= 25°C (unless otherwise specified)
Parameter
Parameter
Parameter
Parameter
Parameter
500
–––
–––
–––
–––
–––
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
2.0
Min. Typ. Max. Units
Min. Typ. Max. Units
6.1
–––
–––
–––
–––
–––
Intrinsic turn-on time is negligible (turn-on is dominated by L
1423 –––
2000 –––
–––
–––
–––
–––
–––
––– -100
––– 0.52
–––
–––
–––
510
–––
–––
–––
–––
208
3.4
8.1
14
35
32
28
55
97
–––
250
100
770
–––
–––
–––
–––
–––
–––
–––
–––
–––
4.0
1.5
5.1
25
52
13
18
11
44
µA
nA
µC
nC
ns
pF
ns
Ω
V
V
V
S
Typ.
Typ.
0.50
–––
–––
–––
–––
–––
V
V
T
di/dt = 100A/µs „
V
V
V
V
V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
V
I
V
V
V
I
R
R
V
V
ƒ = 1.0MHz, See Fig. 5
V
V
V
D
D
GS
GS
DS
DS
DS
GS
GS
J
J
DS
DS
GS
DD
GS
DS
GS
GS
GS
G
D
= 11A
= 11A
= 25°C, I
= 25°C, I
= 9.1Ω
= 22Ω,See Fig. 10
= V
= 500V, V
= 400V, V
= 0V, I
= 10V, I
= 30V
= -30V
= 25V
= 50V, I
= 400V
= 10V, See Fig. 6 and 13 „
= 250V
= 0V
= 0V, V
= 0V, V
= 0V, V
GS
, I
D
S
F
DS
D
D
D
Conditions
DS
DS
= 250µA
Conditions
= 11A
Conditions
= 11A, V
= 250µA
= 6.6A
= 6.6A
GS
GS
= 0V to 400V
Max.
Max.
0.75
= 1.0V, ƒ = 1.0MHz
= 400V, ƒ = 1.0MHz
275
–––
11
17
62
= 0V
= 0V, T
GS
www.vishay.com
„
„
J
= 0V „
G
= 150°C
…
Units
Units
S
°C/W
+L
mJ
mJ
A
D
D
S
)
2