IRFB11N50APBF Vishay, IRFB11N50APBF Datasheet - Page 4

• Manufacturer Part Number: IRFB11N50APBF
• Description: N CHANNEL MOSFET, 500V, 11A, TO-220
• Manufacturer: Vishay
• Type: Power MOSFETr

Specifications of IRFB11N50APBF

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 11A
• Drain Source Voltage Vds: 500V
• On Resistance Rds(on): 520mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 520 mOhm @ 6.6A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 52nC @ 10V
• Input Capacitance (ciss) @ Vds: 1423pF @ 25V
• Power - Max: 170W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.52 Ohm @ 10 V
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 11 A
• Power Dissipation: 170000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.52Ohm
• Drain-source On-volt: 500V
• Gate-source Voltage (max): ±30V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Package Type: TO-220AB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRFB11N50APBF

Document Number: 91094
2400
2000
1600
1200
800
400
100
0.1
10
0
1
Fig 5. Typical Capacitance Vs.
Fig 7. Typical Source-Drain Diode
0.0
1
Drain-to-Source Voltage
C
C
C
iss
V
oss
rss
V
T = 150 C
DS
SD
J
Forward Voltage
V
C
C
C
0.4
, Drain-to-Source Voltage (V)
,Source-to-Drain Voltage (V)
GS
iss
rss
oss
10
= 0V,
= C
= C
= C
°
gs
gd
ds
+ C
+ C
0.8
T = 25 C
J
gd
gd
f = 1MHz
, C
°
100
ds
1.2
SHORTED
V
GS
= 0 V
1000
1.6
A
1000
100
0.1
20
16
12
Fig 8. Maximum Safe Operating Area
10
8
4
0
1
10
0
Fig 6. Typical Gate Charge Vs.
I =
T
T
Single Pulse
D
C
J
= 25 C
= 150 C
OPERATION IN THIS AREA LIMITED
6.6A
Gate-to-Source Voltage
V
DS
°
10
Q , Total Gate Charge (nC)
°
G
, Drain-to-Source Voltage (V)
100
20
BY R
DS(on)
V
V
V
10us
100us
1ms
10ms
DS
DS
DS
FOR TEST CIRCUIT
30
SEE FIGURE
1000
= 400V
= 250V
= 100V
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40
13
10000
50
4