SI4477DY-T1-GE3 Vishay, SI4477DY-T1-GE3 Datasheet - Page 4
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SI4477DY-T1-GE3
Manufacturer Part Number
SI4477DY-T1-GE3
Description
P CHANNEL MOSFET, -20V, 26.6A
Manufacturer
Vishay
Datasheet
1.SI4477DY-T1-GE3.pdf
(7 pages)
Specifications of SI4477DY-T1-GE3
Transistor Polarity
P Channel
Continuous Drain Current Id
-26.6A
Drain Source Voltage Vds
-20V
On Resistance Rds(on)
6.2mohm
Rds(on) Test Voltage Vgs
-4.5V
Threshold Voltage Vgs Typ
-1.5V
Configuration
Single Quad Drain Triple Source
Resistance Drain-source Rds (on)
0.0062 Ohms
Drain-source Breakdown Voltage
- 20 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
18 A
Power Dissipation
3 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOIC-8 Narrow
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI4477DY-T1-GE3
Manufacturer:
VISHAY
Quantity:
25 000
Part Number:
SI4477DY-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Si4477DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
- 0.05
- 0.20
- 0.35
0.001
0.55
0.40
0.25
0.10
0.01
100
0.1
10
1
- 50
0.0
- 25
Source-Drain Diode Forward Voltage
0.2
T
J
= 150 °C
V
SD
0
- Source-to-Drain Voltage (V)
Threshold Voltage
0.4
T
T
J
25
J
- Temperature (°C)
= 25 °C
0.6
50
I
D
T
= 250 µA
75
J
0.8
0.01
100
= - 50 °C
0.1
10
1
0.1
100
* V
I
Single Pulse
Limited by R
D
1.0
T
A
= 1 mA
GS
125
= 25 °C
> minimum V
V
DS
1.2
150
Safe Operating Area
- Drain-to-Source Voltage (V)
DS(on)
1
*
GS
BVDSS Limited
at which R
10
DS(on)
0.05
0.04
0.03
0.02
0.01
0.00
100
80
60
40
20
0
0
is specified
0 .
0
10 µs
100 µs
1 ms
10 ms
100 ms
1 s
10 s
0
1
On-Resistance vs. Gate-to-Source Voltage
I
D
Single Pulse Power, Junction-to-Ambient
= 18 A
100
1
V
0.01
GS
T
J
- Gate-to-Source Voltage (V)
= 25 °C
2
Time (s)
0.1
S09-0858-Rev. A, 18-May-09
Document Number: 64829
3
T
J
1
= 125 °C
4
1
5
0