SI4477DY-T1-GE3 Vishay, SI4477DY-T1-GE3 Datasheet - Page 5

• Manufacturer Part Number: SI4477DY-T1-GE3
• Description: P CHANNEL MOSFET, -20V, 26.6A
• Manufacturer: Vishay

Specifications of SI4477DY-T1-GE3

• Transistor Polarity: P Channel
• Continuous Drain Current Id: -26.6A
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 6.2mohm
• Rds(on) Test Voltage Vgs: -4.5V
• Threshold Voltage Vgs Typ: -1.5V
• Configuration: Single Quad Drain Triple Source
• Resistance Drain-source Rds (on): 0.0062 Ohms
• Drain-source Breakdown Voltage: - 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 18 A
• Power Dissipation: 3 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation P
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 64829
S09-0858-Rev. A, 18-May-09
8
6
4
2
0
0
25
D
Power, Junction-to-Foot
T
is based on T
C
50
- Case Temperature (°C)
75
J(max)
100
30
25
20
15
10
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
5
0
0
125
25
150
T
C
Current Derating*
50
- Case Temperature (°C)
75
100
2.0
1.6
1.2
0.8
0.4
0.0
0
125
Power Derating, Junction-to-Ambient
25
T
150
A
- Ambient Temperature (°C)
50
75
Vishay Siliconix
100
Si4477DY
www.vishay.com
125
150
5