SI8401DB-T1-E3 Vishay, SI8401DB-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI8401DB-T1-E3
• Description: P CH MOSFET, -20V, 3.6A, MICRO FOOT
• Manufacturer: Vishay

Specifications of SI8401DB-T1-E3

• Transistor Polarity: P Channel
• Continuous Drain Current Id: -3.6A
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 65mohm
• Rds(on) Test Voltage Vgs: -4.5V
• Threshold Voltage Vgs Typ: -900mV
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 71674
S-82118-Rev. H, 08-Sep-08
0.15
0.12
0.09
0.06
0.03
0.00
0.1
10
10
8
6
4
2
0
1
0.0
0
0
Source-Drain Diode Forward Voltage
V
I
D
1
DS
0.2
On-Resistance vs. Drain Current
= 1 A
T
= 10 V
4
J
V
= 150 °C
SD
Q
2
g
I
0.4
- Source-to-Drain Voltage (V)
D
- Total Gate Charge (nC)
- Drain Current (A)
Gate Charge
8
3
0.6
4
12
0.8
T
J
5
= 25 °C
V
V
GS
GS
16
= 2.5 V
= 4.5 V
1.0
6
20
1.2
7
1500
1200
900
600
300
0.30
0.24
0.18
0.12
0.06
0.00
1.6
1.4
1.2
1.0
0.8
0.6
0
- 50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
- 25
V
I
C
D
GS
rss
= 1 A
1
4
= 4.5 V
V
T
V
GS
J
0
DS
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
2
25
Capacitance
C
8
os s
I
D
= 1 A
50
Vishay Siliconix
3
C
is s
1 2
75
Si8401DB
4
www.vishay.com
100
1 6
5
125
150
20
6
3