SI8401DB-T1-E3 Vishay, SI8401DB-T1-E3 Datasheet - Page 5

• Manufacturer Part Number: SI8401DB-T1-E3
• Description: P CH MOSFET, -20V, 3.6A, MICRO FOOT
• Manufacturer: Vishay

Specifications of SI8401DB-T1-E3

• Transistor Polarity: P Channel
• Continuous Drain Current Id: -3.6A
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 65mohm
• Rds(on) Test Voltage Vgs: -4.5V
• Threshold Voltage Vgs Typ: -900mV
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

PACKAGE OUTLINE
MICRO FOOT: 4-BUMP (2 x 2, 0.8 mm PITCH)
Notes (Unless Otherwise Specified):
1. Laser mark on the silicon die back, coated with a thin metal.
2. Bumps are 95.5/3.8/0.7 Sn/Ag/Cu.
3. Non-solder mask defined copper landing pad.
4. The flat side of wafers is oriented at the bottom.
Notes:
a. Use millimeters as the primary measurement.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?71674.
Document Number: 71674
S-82118-Rev. H, 08-Sep-08
Dim.
A
A
A
D
b
E
S
e
1
2
e
Recommended Land
Mark on Backside of Die
8401
XXX
0.600
0.260
0.340
0.370
1.520
1.520
0.750
0.370
Min.
e
Millimeters
a
4
Note 3
Solder Mask
0.650
0.290
0.360
0.410
1.600
1.600
0.850
0.380
Max.
0.30
b Diamerter
A
0.31
A
A
2
1
0.40
E
0.0236
0.0102
0.0134
0.0146
0.0598
0.0598
0.0295
0.0146
Min.
Silicon
e
D
Inches
S
Vishay Siliconix
Bump Note 2
Si8401DB
S
e
0.0256
0.0114
0.0142
0.0161
0.0630
0.0630
0.0335
0.0150
Max.
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