SUD50N04-8M8P-GE3 Vishay, SUD50N04-8M8P-GE3 Datasheet - Page 5

• Manufacturer Part Number: SUD50N04-8M8P-GE3
• Description: N CHANNEL MOSFET, 40V, 50A, TO-252
• Manufacturer: Vishay

Specifications of SUD50N04-8M8P-GE3

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 50A
• Drain Source Voltage Vds: 40V
• On Resistance Rds(on): 10.5mohm
• Rds(on) Test Voltage Vgs: 20V
• Threshold Voltage Vgs Typ: 3V
• Configuration: Single
• Resistance Drain-source Rds (on): 0.0088 Ohms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 14 A
• Power Dissipation: 3.1 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: TO-252AA
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation P
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 68647
S10-0109-Rev. B, 18-Jan-10
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
Power Derating, Junction-to-Ambient
25
T
D
J
is based on T
- Junction Temperature (°C)
50
75
J(max)
100
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
60
45
30
15
0
0
125
Package Limited
Current Derating*, Junction-to-Case
25
150
T
C
50
- Case Temperature (°C)
75
100
70
60
50
40
30
20
10
0
0
125
25
Power Derating, Junction-to-Case
150
T
J
- Junction Temperature (°C)
50
SUD50N04-8m8P
75
Vishay Siliconix
100
www.vishay.com
125
150
5