BSS84P Infineon Technologies, BSS84P Datasheet - Page 3
![P CH MOSFET, -60V, 170mA, SOT-23](/photos/19/8/190866/4467711_sml.jpg)
BSS84P
Manufacturer Part Number
BSS84P
Description
P CH MOSFET, -60V, 170mA, SOT-23
Manufacturer
Infineon Technologies
Datasheet
1.BSS84P.pdf
(8 pages)
Specifications of BSS84P
Transistor Polarity
P Channel
Continuous Drain Current Id
170mA
Drain Source Voltage Vds
-60V
On Resistance Rds(on)
8ohm
Rds(on) Test Voltage Vgs
-10V
Threshold Voltage Vgs Typ
-1.5V
Package
SOT-23
Vds (max)
-60.0 V
Rds (on) (max) (@10v)
8,000.0 mOhm
Rds (on) (max) (@4.5v)
12,000.0 mOhm
Rds (on) (max) (@2.5v)
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BSS84P
Manufacturer:
INFINEON
Quantity:
30 000
Part Number:
BSS84P
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Company:
Part Number:
BSS84P E6327
Manufacturer:
INFINEON
Quantity:
136
Part Number:
BSS84P E6327
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Part Number:
BSS84P H6327
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Company:
Part Number:
BSS84P L6327
Manufacturer:
Infineon Technologies
Quantity:
30 000
Part Number:
BSS84P L6327
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Part Number:
BSS84P-E6327
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Company:
Part Number:
BSS84PE6327
Manufacturer:
INFINEON
Quantity:
223
Electrical Characteristics, at
Parameter
Dynamic Characteristics
Transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Inverse diode continuous
forward current
Inv. diode direct current, pulsed I
Inverse diode forward voltage V
Reverse recovery time
Reverse recovery charge
Rev 2.3
T A
g
C
C
C
t
t
t
t
Q
Q
Q
V
I
t
Q
Symbol
d(on)
r
d(off)
f
S
SM
rr
fs
iss
oss
rss
(plateau) V
SD
gs
gd
g
rr
= 25 °C, unless otherwise specified
V
I
V
f=1MHz
V
I
V
V
V
T
V
V
di
D
D
Page 3
A
DS
GS
DD
DD
DD
GS
DD
GS
R
F
=-0.14A
=-0.14A, R
=25°C
=-30V, I
/dt=100A/µs
£
=0, V
=-30V, V
=-48V, I
=-48V, I
=0 to -10V
=-48V, I
=0, I
2*I
Conditions
D
F
*R
DS
=-0.17A
F =
DS(on)max
D
D
D
=-25V,
G
GS
l
=-0.17A
=-0.17A,
=-0.17A
S
=25
,
=-4.5V,
,
0.065
min.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Values
-3.42
-0.93
0.13
16.2
20.5
0.25
typ.
6.7
8.6
0.3
15
23
10
6
2
1
-
-
2005-07-21
max.
-0.17 A
-0.68
-1.24 V
BSS 84 P
24.3
12.9
30.8
0.37
0.45
1.5
19
10
34
15
8
3
-
-
Unit
S
pF
ns
nC
V
ns
nC