BSS84P Infineon Technologies, BSS84P Datasheet - Page 7

• Manufacturer Part Number: BSS84P
• Description: P CH MOSFET, -60V, 170mA, SOT-23
• Manufacturer: Infineon Technologies

Specifications of BSS84P

• Transistor Polarity: P Channel
• Continuous Drain Current Id: 170mA
• Drain Source Voltage Vds: -60V
• On Resistance Rds(on): 8ohm
• Rds(on) Test Voltage Vgs: -10V
• Threshold Voltage Vgs Typ: -1.5V
• Package: SOT-23
• Vds (max): -60.0 V
• Rds (on) (max) (@10v): 8,000.0 mOhm
• Rds (on) (max) (@4.5v): 12,000.0 mOhm
• Rds (on) (max) (@2.5v): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

13 Typ. avalanche energy
E
I
15 Drain-source breakdown voltage
V
D
AS
(BR)DSS
= -0.17 A , V
Rev 2.3
mJ
= f (
-72
-68
-66
-64
-62
-60
-58
-56
-54
1.5
0.5
V
3
2
1
0
-60
25
BSS 84 P
T A
= f (
), parameter:
45
-20
T A
DD
65
)
20
= -25 V, R
85
60
105
100
GS
125
= 25
°C
°C
T A
T A
165
180
Page 7
14 Typ. gate charge
V
parameter: I
GS
-16
-12
-10
= f (Q
V
-8
-6
-4
-2
0
0
BSS 84 P
0.2
Gate
D
= -0.17 A pulsed; T j = 25 °C
)
0.4
0,2
V
0.6
DS max
0.8
0,8 V
1
2005-07-21
BSS 84 P
DS max
1.2
nC
Q
Gate
1.5