BUK6209-30C NXP Semiconductors, BUK6209-30C Datasheet - Page 4

• Manufacturer Part Number: BUK6209-30C
• Description: MOSFET,N CH,30V,46A,SOT428
• Manufacturer: NXP Semiconductors

Specifications of BUK6209-30C

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 8.3mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 16V
• Operating Temperature Range: -55°C To +175°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: D-PAK
• Rohs Compliant: Yes

NXP Semiconductors
BUK6209-30C
Product data sheet
Fig 1.
Fig 3.
(A)
I
D
10
(A)
10
10
10
I
D
10
80
60
40
20
-1
4
3
2
1
0
10
mounting base temperature
(1) Capped at 50 A due to package
Continuous drain current as a function of
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
0
-1
(1)
50
100
Limit R
DSon
150
= V
All information provided in this document is subject to legal disclaimers.
T
003aae794
mb
DS
1
( ° C)
/ I
D
200
Rev. 2 — 1 October 2010
Fig 2.
P
DC
(%)
der
120
N-channel TrenchMOS intermediate level FET
80
40
0
function of mounting base temperature
Normalized total power dissipation as a
0
10
50
BUK6209-30C
100
V
t
p
DS
= 10 μ s
100 ms
100 μ s
(V)
10 ms
1 ms
150
© NXP B.V. 2010. All rights reserved.
T
003aae788
mb
03na19
(°C)
10
200
2
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