BUK6209-30C NXP Semiconductors, BUK6209-30C Datasheet - Page 7

• Manufacturer Part Number: BUK6209-30C
• Description: MOSFET,N CH,30V,46A,SOT428
• Manufacturer: NXP Semiconductors

Specifications of BUK6209-30C

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 8.3mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 16V
• Operating Temperature Range: -55°C To +175°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: D-PAK
• Rohs Compliant: Yes

NXP Semiconductors
Table 6.
BUK6209-30C
Product data sheet
Symbol
Source-drain diode
V
t
Q
rr
Fig 5.
Fig 7.
SD
r
(S)
g
60
40
20
(A)
fs
0
I
D
60
40
20
0
0
drain current; typical values
function of gate-source voltage; typical values
Forward transconductance as a function of
Transfer characteristics: drain current as a
0
Characteristics
Parameter
source-drain voltage
reverse recovery time
recovered charge
T
j
20
= 175 ° C
2
…continued
40
T
4
j
= 25 ° C
003aae784
Conditions
I
see
I
V
V
All information provided in this document is subject to legal disclaimers.
S
S
GS
DS
003aae786
= 25 A; V
= 20 A; dI
I
D
(V)
Figure 16
(A)
= 25 V
60
Rev. 2 — 1 October 2010
6
GS
S
/dt = -100 A/µs; V
= 0 V; T
Fig 6.
Fig 8.
j
= 25 °C;
R
(mΩ)
(A)
DSon
200
150
100
I
D
N-channel TrenchMOS intermediate level FET
50
25
20
15
10
5
0
0
function of drain-source voltage; typical values
of gate-source voltage; typical values
Output characteristics: drain current as a
Drain-source on-state resistance as a function
GS
0
0
= 0 V;
5
1
10.0
BUK6209-30C
Min
-
-
-
10
2
Typ
0.8
34
32
V
15
3
GS
© NXP B.V. 2010. All rights reserved.
V
(V) = 8.0
V
003aae785
003aae787
GS
DS
Max
1.2
-
-
(V)
(V)
6.0
5.0
4.5
4.0
3.6
3.2
20
4
Unit
V
ns
nC
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