BUK625R0-40C NXP Semiconductors, BUK625R0-40C Datasheet - Page 7

• Manufacturer Part Number: BUK625R0-40C
• Description: MOSFET,N CH,40V,87A,SOT428
• Manufacturer: NXP Semiconductors

Specifications of BUK625R0-40C

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 40V
• On Resistance Rds(on): 4.1mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 16V
• Operating Temperature Range: -55°C To +175°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: D-PAK
• Rohs Compliant: Yes

NXP Semiconductors
Table 6.
BUK625R0-40C
Product data sheet
Symbol
Source-drain diode
V
t
Q
rr
Fig 5.
Fig 7.
SD
r
(S)
(A)
g
I
100
D
fs
100
80
60
40
20
75
50
25
0
0
drain current; typical values
function of gate-source voltage; typical values
Forward transconductance as a function of
Transfer characteristics: drain current as a
0
0
Characteristics
Parameter
source-drain voltage
reverse recovery time
recovered charge
20
T
j
= 175 °C
2
…continued
40
T
j
= 25 °C
4
60
V
Conditions
I
see
I
V
All information provided in this document is subject to legal disclaimers.
S
S
003a a e 776
GS
DS
003aae320
= 25 A; V
= 20 A; dI
I
D
(V)
Figure 16
(A)
= 25 V
Rev. 1 — 17 September 2010
80
6
GS
S
/dt = -100 A/µs; V
= 0 V; T
Fig 6.
Fig 8.
j
= 25 °C;
(m)
R
(A)
I
DS on
D
100
N-channel TrenchMOS intermediate level FET
20
15
10
75
50
25
5
0
0
of gate-source voltage; typical values
function of drain-source voltage; typical values
Drain-source on-state resistance as a function
Output characteristics: drain current as a
GS
0
0
= 0 V;
10.0
0.5
5
5.0
BUK625R0-40C
4.5
Min
-
-
-
10
1
Typ
0.85
42
65
V
GS
1.5
15
© NXP B.V. 2010. All rights reserved.
(V) =
003a a e 772
003a a e 778
V
V
GS
DS
Max
1.2
-
-
4.0
3.8
3.6
3.4
3.2
(V)
(V)
20
2
Unit
V
ns
nC
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