BUK625R0-40C NXP Semiconductors, BUK625R0-40C Datasheet - Page 8

• Manufacturer Part Number: BUK625R0-40C
• Description: MOSFET,N CH,40V,87A,SOT428
• Manufacturer: NXP Semiconductors

Specifications of BUK625R0-40C

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 40V
• On Resistance Rds(on): 4.1mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 16V
• Operating Temperature Range: -55°C To +175°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: D-PAK
• Rohs Compliant: Yes

NXP Semiconductors
BUK625R0-40C
Product data sheet
Fig 9.
Fig 11. Drain-source on-state resistance as a function
R
(m)
V
GS(th)
(V)
DS on
20
15
10
4
3
2
1
0
5
0
-60
junction temperature
of drain current; typical values
Gate-source threshold voltage as a function of
0
20
V
0
GS
(V) =
40
max
min
typ
3.8
60
60
4.0
120
80
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003a a e 779
003aad805
T
I
j
D
(°C)
10.0
(A)
4.5
5.0
6.0
Rev. 1 — 17 September 2010
100
180
Fig 10. Sub-threshold drain current as a function of
Fig 12. Normalized drain-source on-state resistance
(A)
I
10
D
10
10
10
10
10
a
2.5
1.5
0.5
N-channel TrenchMOS intermediate level FET
-1
-2
-3
-4
-5
-6
2
1
0
-60
gate-source voltage
factor as a function of junction temperature
0
1
0
BUK625R0-40C
min
60
2
typ
max
120
3
© NXP B.V. 2010. All rights reserved.
003aad806
V
003aad793
T
GS
j
(°C)
(V)
180
4
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