BUK653R5-55C NXP Semiconductors, BUK653R5-55C Datasheet - Page 2
![MOSFET,N CH,55V,120A,SOT78](/photos/41/53/415315/sot078a_3d_sml.gif)
BUK653R5-55C
Manufacturer Part Number
BUK653R5-55C
Description
MOSFET,N CH,55V,120A,SOT78
Manufacturer
NXP Semiconductors
Datasheet
1.BUK653R5-55C127.pdf
(14 pages)
Specifications of BUK653R5-55C
Transistor Polarity
N Channel
Drain Source Voltage Vds
55V
On Resistance Rds(on)
3.3mohm
Rds(on) Test Voltage Vgs
10V
Voltage Vgs Max
16V
Operating Temperature Range
-55°C To +175°C
Transistor Case
RoHS Compliant
Transistor Case Style
TO-220AB
Rohs Compliant
Yes
NXP Semiconductors
2. Pinning information
Table 2.
3. Ordering information
Table 3.
BUK653R5-55C
Product data sheet
Pin
1
2
3
mb
Type number
BUK653R5-55C
Symbol Description
G
D
S
D
Pinning information
Ordering information
gate
drain
source
mounting base; connected to
drain
Table 1.
[1]
Package
Name
TO-220AB
Symbol
Avalanche ruggedness
E
Dynamic characteristics
Q
DS(AL)S
GD
Continuous current is limited by package.
Quick reference data
Parameter
non-repetitive
drain-source
avalanche energy
gate-drain charge I
Description
plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 27 October 2010
Simplified outline
SOT78A (TO-220AB)
Conditions
I
R
T
V
see
D
D
…continued
j(init)
GS
GS
= 120 A; V
= 25 A; V
Figure 14
= 10 V; see
= 50 Ω; V
= 25 °C; unclamped
1 2
mb
3
N-channel TrenchMOS intermediate level FET
DS
sup
GS
= 44 V;
≤ 55 V;
Figure
= 10 V;
13;
Graphic symbol
BUK653R5-55C
mbb076
G
Min
-
-
© NXP B.V. 2010. All rights reserved.
D
S
Typ
-
56
Version
SOT78A
Max Unit
455
-
2 of 14
mJ
nC