BUK653R5-55C NXP Semiconductors, BUK653R5-55C Datasheet - Page 8
![MOSFET,N CH,55V,120A,SOT78](/photos/41/53/415315/sot078a_3d_sml.gif)
BUK653R5-55C
Manufacturer Part Number
BUK653R5-55C
Description
MOSFET,N CH,55V,120A,SOT78
Manufacturer
NXP Semiconductors
Datasheet
1.BUK653R5-55C127.pdf
(14 pages)
Specifications of BUK653R5-55C
Transistor Polarity
N Channel
Drain Source Voltage Vds
55V
On Resistance Rds(on)
3.3mohm
Rds(on) Test Voltage Vgs
10V
Voltage Vgs Max
16V
Operating Temperature Range
-55°C To +175°C
Transistor Case
RoHS Compliant
Transistor Case Style
TO-220AB
Rohs Compliant
Yes
NXP Semiconductors
BUK653R5-55C
Product data sheet
Fig 9.
Fig 11. Drain-source on-state resistance as a function
R
(mΩ)
(A)
DSon
I
D
10
10
10
10
10
10
16
12
-1
-2
-3
-4
-5
-6
8
4
0
gate-source voltage
of drain current; typical values
Sub-threshold drain current as a function of
0
0
V
GS
(V) =
3.6
25
1
min
3.8
50
2
typ
max
6.0
75
3
8.0
4.5
All information provided in this document is subject to legal disclaimers.
4.0
003aae392
003aad806
V
I
D
GS
(A)
5.0
(V)
10
100
Rev. 1 — 27 October 2010
4
Fig 10. Gate-source threshold voltage as a function of
Fig 12. Normalized drain-source on-state resistance
V
GS(th)
(V)
a
2.5
1.5
0.5
N-channel TrenchMOS intermediate level FET
4
3
2
1
0
2
1
0
-60
-60
junction temperature
factor as a function of junction temperature
0
0
BUK653R5-55C
max @1mA
min @2.5mA
typ @1mA
60
60
120
120
© NXP B.V. 2010. All rights reserved.
003aae542
T
003aad803
T
j
j
(°C)
(°C)
180
180
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