BUK661R6-30C NXP Semiconductors, BUK661R6-30C Datasheet - Page 4

• Manufacturer Part Number: BUK661R6-30C
• Description: MOSFET,N CH,30V,120A,SOT404
• Manufacturer: NXP Semiconductors

Specifications of BUK661R6-30C

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 1400µohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 16V
• Operating Temperature Range: -55°C To +175°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: SOT-404
• Rohs Compliant: Yes

NXP Semiconductors
BUK661R6-30C
Product data sheet
Fig 1.
Fig 3.
(A)
I
D
(A)
I
10
D
10
10
10
300
250
200
150
100
10
−1
50
1
4
3
2
10
0
mounting base temperature
Continuous drain current as a function of
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
0
−1
50
(1)
Limit R
100
DSon
= V
150
DS
/I
All information provided in this document is subject to legal disclaimers.
T
D
003aae232
mb
1
(°C)
Rev. 01 — 6 September 2010
200
Fig 2.
P
DC
(%)
der
120
N-channel TrenchMOS intermediate level FET
80
40
0
function of mounting base temperature
Normalized total power dissipation as a
0
10
50
BUK661R6-30C
100
V
DS
t
100 μs
1 ms
10 ms
100 ms
(V)
p
= 10 μs
150
© NXP B.V. 2010. All rights reserved.
T
mb
001aal522
03na19
(°C)
200
10
2
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