BUK661R6-30C NXP Semiconductors, BUK661R6-30C Datasheet - Page 9

• Manufacturer Part Number: BUK661R6-30C
• Description: MOSFET,N CH,30V,120A,SOT404
• Manufacturer: NXP Semiconductors

Specifications of BUK661R6-30C

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 1400µohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 16V
• Operating Temperature Range: -55°C To +175°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: SOT-404
• Rohs Compliant: Yes

NXP Semiconductors
BUK661R6-30C
Product data sheet
Fig 13. Gate-source voltage as a function of gate
Fig 15. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values
V
(V)
GS
10
8
6
4
2
0
charge; typical values
0
14V
60
120
(A)
I
S
100
V
80
60
40
20
180
DS
0
0
= 24V
All information provided in this document is subject to legal disclaimers.
Q
003aae241
G
(nC)
Tj = 175 °C
Rev. 01 — 6 September 2010
240
0.5
Fig 14. Input, output and reverse transfer capacitance
Tj = 25 °C
(pF)
C
1
10
10
10
10
N-channel TrenchMOS intermediate level FET
5
4
3
2
10
as a function of drain-source voltage; typical
values
V
SD
-1
003a a e 243
(V)
1.5
1
BUK661R6-30C
10
© NXP B.V. 2010. All rights reserved.
V
DS
003aae009
C
C
C
(V)
iss
oss
rss
10
2
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