PH8230E NXP Semiconductors, PH8230E Datasheet
![MOSFET, N, 30V, LFPAK](/photos/22/17/221780/756424404-40_sml.jpg)
PH8230E
Specifications of PH8230E
Available stocks
Related parts for PH8230E
PH8230E Summary of contents
Page 1
... PH8230E N-channel TrenchMOS™ enhanced logic level FET Rev. 03 — 02 March 2004 M3D748 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology. 1.2 Features Low thermal resistance Low gate drive 1.3 Applications ...
Page 2
... Conditions 150 Figure 2 and 100 Figure pulsed Figure Figure pulsed unclamped inductive load 33 0.15 ms starting Rev. 03 — 02 March 2004 PH8230E Version SOT669 Min Max Unit - 268 +150 C 55 +150 150 A - 115 mJ © Koninklijke Philips Electronics N.V. 2004. All rights reserved ...
Page 3
... N-channelTrenchMOS™ enhanced logic level FET 03aa15 120 I der (%) 150 200 ------------------- der I Fig 2. Normalized continuous drain current as a function of mounting base temperature Rev. 03 — 02 March 2004 PH8230E 03aa23 50 100 150 200 100 003aaa369 100 100 (V) © Koninklijke Philips Electronics N.V. 2004. All rights reserved ...
Page 4
... Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration. 9397 750 12946 Product data N-channelTrenchMOS™ enhanced logic level FET Conditions Figure Rev. 03 — 02 March 2004 PH8230E Min Typ Max Unit - - 2 K/W 003aaa370 (s) © ...
Page 5
... mA Figure 150 150 Figure 7 and 150 4 Figure Figure MHz; Figure 4 Figure /dt = 100 Rev. 03 — 02 March 2004 PH8230E Min Typ Max Unit 1.7 2 500 100 nA - 7 1400 - pF - 527 - pF - 235 - 0.85 1 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. ...
Page 6
... - ( ---------------------------- - R DSon 25 C Fig 8. Normalized drain-source on-state resistance factor as a function of junction temperature. Rev. 03 — 02 March 2004 PH8230E 003aaa372 150 ( DSon 03aa27 0 60 120 180 DSon © Koninklijke Philips Electronics N.V. 2004. All rights reserved ...
Page 7
... N-channelTrenchMOS™ enhanced logic level FET 003aaa414 ( 120 180 Fig 10. Sub-threshold drain current as a function of gate-source voltage (pF (V) Rev. 03 — 02 March 2004 PH8230E 03am28 min typ max ( 003aaa374 C iss C oss C rss 10 2 © Koninklijke Philips Electronics N.V. 2004. All rights reserved ...
Page 8
... Product data N-channelTrenchMOS™ enhanced logic level FET 003aaa375 ( 0 ( Fig 13. Gate-source voltage as a function of gate charge; typical values. Rev. 03 — 02 March 2004 PH8230E 003aaa376 (nC © Koninklijke Philips Electronics N.V. 2004. All rights reserved ...
Page 9
... D 1 (1) (1) ( max 2.2 0.9 0.25 0.30 4.10 5.0 3.3 4.20 2.0 0.7 0.19 0.24 3.80 4.8 3.1 REFERENCES JEDEC JEITA MO-235 Rev. 03 — 02 March 2004 PH8230E SOT669 detail 6.2 0.85 1.3 1.3 8 1.27 0.25 0.1 5.8 0.40 0.8 0.8 0 EUROPEAN ...
Page 10
... Preliminary data (9397 750 11145) 9397 750 12946 Product data N-channelTrenchMOS™ enhanced logic level FET Table 5 “Characteristics” Table 3 data revised in Table 5 data revised in Table 5 Rev. 03 — 02 March 2004 PH8230E © Koninklijke Philips Electronics N.V. 2004. All rights reserved ...
Page 11
... Trademarks TrenchMOS — Rev. 03 — 02 March 2004 Rev. 03 — 02 March 2004 PH8230E PH8230E is a trademark of Koninklijke Philips Electronics N.V. Fax: + 24825 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. © Koninklijke Philips Electronics N.V. 2004. All rights reserved ...
Page 12
... Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 02 March 2004 Document order number: 9397 750 12946 PH8230E N-channelTrenchMOS™ enhanced logic level FET ...