PH8230E NXP Semiconductors, PH8230E Datasheet - Page 8

• Manufacturer Part Number: PH8230E
• Description: MOSFET, N, 30V, LFPAK
• Manufacturer: NXP Semiconductors

Specifications of PH8230E

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 67A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 7.6ohm
• Rds(on) Test Voltage Vgs: 4.5V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C
• Threshold Voltage Vgs Typ: 1.7V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Philips Semiconductors
9397 750 12946
Product data
Fig 12. Source (diode forward) current as a function of
T
(A)
j
I S
= 25 C and 150 C; V
10
8
6
4
2
0
source-drain (diode forward) voltage; typical
values.
0
0.2
T j = 150 C
0.4
GS
= 0 V
0.6
0.8
25 C
V SD (V)
003aaa375
1
Rev. 03 — 02 March 2004
Fig 13. Gate-source voltage as a function of gate
N-channelTrenchMOS™ enhanced logic level FET
V GS
I
(V)
D
= 20 A; V
10
4
charge; typical values.
8
6
2
0
0
DD
= 10 V
10
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
20
PH8230E
Q G (nC)
003aaa376
30
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