PH8230E NXP Semiconductors, PH8230E Datasheet - Page 8
![MOSFET, N, 30V, LFPAK](/photos/22/17/221780/756424404-40_sml.jpg)
PH8230E
Manufacturer Part Number
PH8230E
Description
MOSFET, N, 30V, LFPAK
Manufacturer
NXP Semiconductors
Datasheet
1.PH8230E.pdf
(12 pages)
Specifications of PH8230E
Transistor Polarity
N Channel
Continuous Drain Current Id
67A
Drain Source Voltage Vds
30V
On Resistance Rds(on)
7.6ohm
Rds(on) Test Voltage Vgs
4.5V
Voltage Vgs Max
20V
Operating Temperature Range
-55°C
Threshold Voltage Vgs Typ
1.7V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
PH8230E
Manufacturer:
NXP
Quantity:
1 685
Company:
Part Number:
PH8230EЈ¬115
Manufacturer:
NXP
Quantity:
1 500
Philips Semiconductors
9397 750 12946
Product data
Fig 12. Source (diode forward) current as a function of
T
(A)
j
I S
= 25 C and 150 C; V
10
8
6
4
2
0
source-drain (diode forward) voltage; typical
values.
0
0.2
T j = 150 C
0.4
GS
= 0 V
0.6
0.8
25 C
V SD (V)
003aaa375
1
Rev. 03 — 02 March 2004
Fig 13. Gate-source voltage as a function of gate
N-channelTrenchMOS™ enhanced logic level FET
V GS
I
(V)
D
= 20 A; V
10
4
charge; typical values.
8
6
2
0
0
DD
= 10 V
10
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
20
PH8230E
Q G (nC)
003aaa376
30
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