PMN38EN NXP Semiconductors, PMN38EN Datasheet - Page 3

• Manufacturer Part Number: PMN38EN
• Description: MOSFET,N CH,30V,5.4A,SOT457
• Manufacturer: NXP Semiconductors

Specifications of PMN38EN

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 49.6mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To +150°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: SOT-457
• Rohs Compliant: Yes

NXP Semiconductors
PMN38EN_2
Product data sheet
Fig 1. Normalized continuous drain current as a
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
(A)
(%)
I
I
D
10
10
der
120
10
80
40
10
-1
-2
2
1
0
10
T
function of solder point temperature
I
der
0
s p
-1
= 25 °C; I
=
I
D ( 25°C )
I
D
Limit R
50
DM
× 100 %
DSon
is single pulse
= V
100
DS
/ I
D
150
T
03aa25
sp
1
( ° C)
200
Rev. 02 — 3 October 2007
DC
Fig 2. Normalized total power dissipation as a
P
(%)
120
der
80
40
0
P
function of solder point temperature
0
der
=
10
P
N-channel TrenchMOS logic level FET
tot ( 25°C )
P
50
tot
× 100 %
100
t
100 μ s
1 ms
10 ms
100 ms
p
V
= 10 μ s
DS
PMN38EN
(V)
150
© NXP B.V. 2007. All rights reserved.
T
003aab227
03aa17
sp
( ° C)
10
200
2
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