PMN38EN NXP Semiconductors, PMN38EN Datasheet - Page 6

• Manufacturer Part Number: PMN38EN
• Description: MOSFET,N CH,30V,5.4A,SOT457
• Manufacturer: NXP Semiconductors

Specifications of PMN38EN

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 49.6mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To +150°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: SOT-457
• Rohs Compliant: Yes

NXP Semiconductors
PMN38EN_2
Product data sheet
Fig 5. Output characteristics: drain current as a
Fig 7. Sub-threshold drain current as a function of
(A)
(A)
10
10
10
10
10
10
I
I
D
D
-1
-2
-3
-4
-5
-6
20
15
10
5
0
T
T
function of drain-source voltage; typical values
gate-source voltage
0
0
j
j
= 25 °C
= 25 °C; V
0.2
DS
1
= V
min
0.4
GS
typ
0.6
10
2
max
6
V
GS
V
0.8
4.5
GS
003aab228
03aa36
(V) = 2.1
V
(V)
DS
3.9
3.5
3.1
2.9
2.7
2.5
2.3
(V)
Rev. 02 — 3 October 2007
1
3
Fig 6. Transfer characteristics: drain current as a
Fig 8. Drain-source on-state resistance as a function
R
(mΩ)
(A)
DSon
I
D
20
15
10
60
40
20
5
0
V
0
T
function of gate-source voltage; typical values
of drain current; typical values
DS
0
0
j
= 25 °C
T
j
> I
= 25 °C
D
N-channel TrenchMOS logic level FET
× R
1
5
DSon
V
GS
T
j
(V) = 3.1
= 150 °C
10
2
25 °C
PMN38EN
15
3
© NXP B.V. 2007. All rights reserved.
V
003aab229
I
GS
D
3.5
03aj73
(A)
(V)
3.9
4.5
10
6
20
4
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