PSMN014-40YS NXP Semiconductors, PSMN014-40YS Datasheet - Page 8

• Manufacturer Part Number: PSMN014-40YS
• Description: MOSFET,N CH,40V,46A,LFPAK
• Manufacturer: NXP Semiconductors

Specifications of PSMN014-40YS

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 40V
• On Resistance Rds(on): 11mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To +175°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: SOT-669
• Rohs Compliant: Yes

NXP Semiconductors
PSMN014-40YS
Product data sheet
Fig 9.
Fig 11. Sub-threshold drain current as a function of
(A)
(A)
I
10
10
10
10
10
10
I
D
D
100
80
60
40
20
−1
−2
−3
−4
−5
−6
0
function of drain-source voltage; typical values
gate-source voltage
Output characteristics: drain current as a
0
0
20
15
10
2
3
min
typ
6
4
V
max
GS
V
All information provided in this document is subject to legal disclaimers.
GS
(V) = 8
003aad302
V
DS
(V)
03aa35
6.5
5.5
4.5
(V)
7
6
5
Rev. 03 — 25 October 2010
9
6
N-channel LFPAK 40 V, 14 mΩ standard level MOSFET
Fig 10. Gate-source threshold voltage as a function of
Fig 12. Normalized drain-source on-state resistance
V
GS(th)
(V)
1.5
0.5
a
5
4
3
2
1
0
2
1
0
−60
-60
junction temperature
factor as a function of junction temperature
0
0
PSMN014-40YS
60
60
max
min
typ
120
120
© NXP B.V. 2010. All rights reserved.
003aad280
T
T
j
j
03ne89
(°C)
( ° C)
180
180
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