PSMN014-60LS,115 NXP Semiconductors, PSMN014-60LS,115 Datasheet
PSMN014-60LS,115
Specifications of PSMN014-60LS,115
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PSMN014-60LS,115 Summary of contents
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... PSMN014-60LS N-channel QFN3333 mΩ standard level MOSFET Rev. 2 — 18 August 2010 1. Product profile 1.1 General description Standard level N-channel MOSFET in QFN3333 package qualified to 150 °C. This product is designed and qualified for use in a wide range of industrial, communications and power supply equipment. ...
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... R Simplified outline Transparent top view SOT873-1 (QFN3333) Description plastic thermal enhanced very thin small outline package; no leads; 8 terminals All information provided in this document is subject to legal disclaimers. Rev. 2 — 18 August 2010 PSMN014-60LS Min = Figure 13 °C; - j(init) ≤ sup = 50 Ω ...
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... GS j(init) ≤ unclamped sup 003aae469 120 P der (%) 150 200 T (°C) mb Fig 2. Normalized total power dissipation as a function of solder point temperature All information provided in this document is subject to legal disclaimers. Rev. 2 — 18 August 2010 PSMN014-60LS Min - = 20 kΩ -20 Figure 1 - Figure ° -55 - ° Ω ...
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... PSMN014-60LS Product data sheet N-channel QFN3333 mΩ standard level MOSFET Limit DSon Conditions see Figure 4 −4 − All information provided in this document is subject to legal disclaimers. Rev. 2 — 18 August 2010 PSMN014-60LS 003aae470 =10 μ 100 μ 100 (V) DS Min Typ Max - 1 1.3 [1] - ...
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... DS GS see Figure 13; see Figure see Figure 13; DS see Figure MHz °C; see Figure Ω 4.7 Ω °C G(ext) j All information provided in this document is subject to legal disclaimers. Rev. 2 — 18 August 2010 PSMN014-60LS Min Typ Max Unit 2 4 0.1 2 µ µ 100 ...
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... A; dI /dt = 100 A/µ 003aae472 5.0 4 (V) DS Fig 6. 003aae474 (A) D Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 2 — 18 August 2010 PSMN014-60LS Min Typ - 0. ( 175 ° Transfer characteristics: drain current as a function of gate-source voltage; typical values 2000 C (pF) ...
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... R DSon (mΩ 120 180 T (°C) j Fig 12. Drain-source on-state resistance as a function of drain current; typical values All information provided in this document is subject to legal disclaimers. Rev. 2 — 18 August 2010 PSMN014-60LS min typ max 003aae477 V (V) = 4 © NXP B.V. 2010. All rights reserved. ...
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... N-channel QFN3333 mΩ standard level MOSFET Q GD 003aaa508 Fig 14. Gate-source voltage as a function of gate 003aae476 C iss C oss C rss (V) DS Fig 16. Source (diode forward) current as a function of All information provided in this document is subject to legal disclaimers. Rev. 2 — 18 August 2010 PSMN014-60LS 48V (V) 8 12V charge; typical values ...
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... Fig 17. Drain-source on-state resistance as a function of gate-source voltage; typical values PSMN014-60LS Product data sheet N-channel QFN3333 mΩ standard level MOSFET 50 DSon All information provided in this document is subject to legal disclaimers. Rev. 2 — 18 August 2010 PSMN014-60LS 003aae478 (V) GS © NXP B.V. 2010. All rights reserved ...
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... 2.4 3.4 1.80 0.55 0.52 0.65 1.95 2.2 3.2 1.58 0.45 0.35 REFERENCES JEDEC JEITA - - - - - - All information provided in this document is subject to legal disclaimers. Rev. 2 — 18 August 2010 PSMN014-60LS detail 0.1 0.05 0.1 0.1 EUROPEAN PROJECTION SOT873 ISSUE DATE 10-03-10 19-04-10 © NXP B.V. 2010. All rights reserved. ...
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... NXP Semiconductors 8. Revision history Table 7. Revision history Document ID Release date PSMN014-60LS v.2 20100818 • Modifications: Status changed from objective to product. PSMN014-60LS v.1 20100625 PSMN014-60LS Product data sheet N-channel QFN3333 mΩ standard level MOSFET Data sheet status Change notice Product data sheet ...
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... In case an individual agreement is concluded only the terms and conditions of the respective All information provided in this document is subject to legal disclaimers. Rev. 2 — 18 August 2010 PSMN014-60LS © NXP B.V. 2010. All rights reserved ...
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... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 2 — 18 August 2010 PSMN014-60LS Trademarks © NXP B.V. 2010. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 18 August 2010 Document identifier: PSMN014-60LS ...