PSMN7R0-40LS NXP Semiconductors, PSMN7R0-40LS Datasheet - Page 8

• Manufacturer Part Number: PSMN7R0-40LS
• Description: MOSFET,N CH,40V,40A,QFN3333
• Manufacturer: NXP Semiconductors

Specifications of PSMN7R0-40LS

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 40V
• On Resistance Rds(on): 5.6mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To +150°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: QFN
• Rohs Compliant: Yes

NXP Semiconductors
PSMN7R0-40LS
Product data sheet
Fig 13. Drain-source on-state resistance as a function
Fig 15. Gate-source voltage as a function of gate
V
R
(mΩ)
(V)
GS
DSon
25
20
15
10
10
5
0
8
6
4
2
0
of drain current; typical values
charge; typical values
T
T
0
0
j
j
= 25°C; t
= 25°C and I
V
GS
V
(V) = 5.0
DS
15
p
= 20 V
= 300 µs
10
32 V
8 V
D
= 30 A
30
20
45
Q
All information provided in this document is subject to legal disclaimers.
G
5.5
I
003aae523
D
003aae522
(nC)
6.0
6.5
7.0
10
(A)
8.0
60
30
Rev. 2 — 18 August 2010
N-channel QFN3333 40 V 7.0 mΩ standard level MOSFET
Fig 14. Gate charge waveform definitions
Fig 16. Input, output and reverse transfer capacitances
(pF)
10
C
10
10
4
3
2
10
as a function of drain-source voltage; typical
values
V
V
−2
GS
V
V
V
GS(pl)
DS
GS(th)
GS
= 0 V, f = 1 MHz
10
Q
−1
GS1
I
Q
D
PSMN7R0-40LS
GS
Q
GS2
1
Q
G(tot)
Q
GD
10
© NXP B.V. 2010. All rights reserved.
V
003aaa508
003aae524
DS
C
C
C
rss
iss
oss
(V)
10
2
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